9,185 research outputs found
Reply to Comment on "A local realist model for correlations of the singlet state"
The general conclusion of Seevinck and Larsson is that our model exploits the
so-called coincidence-time loophole and produces sinusoidal (quantum-like)
correlations but does not model the singlet state because it does not violate
the relevant Bell inequality derived by Larsson and Gill, since in order to
obtain the sinusoidal correlations the probability of coincidences in our model
goes to zero. In this reply, we refute their arguments that lead to this
conclusion and demonstrate that our model can reproduce results of photon and
ion-trap experiments with frequencies of coincidences that are not in conflict
with the observations.Comment: Corrected typo
Brain injury markers in new-onset seizures in adults: A pilot study
Background:
Biochemical markers of brain pathology could potentially contribute to diagnosis and prediction in epilepsy. We describe levels of five brain injury markers in adults with new-onset seizures, and assess group differences in patients with a single seizure, epilepsy, and poststroke epilepsy.
Methods:
In this prospective observational study, adults with new-onset seizures were recruited at Sahlgrenska University Hospital, Sweden, and concentrations of glial fibrillary acidic protein (GFAP), neurofilament light (NfL), microtubule-associated protein tau (tau), S100 calcium-binding protein (S100B), and neuron-specific enolase (NSE) were measured. Participants were categorized as epilepsy, poststroke epilepsy (PSE), or single seizure (no additional seizures). Patients were followed until a diagnosis of epilepsy or PSE, or for at least two years in single seizure cases.
Results:
The cohort included 23 (37%) individuals with a single seizure, 24 (39%) with epilepsy, and 15 (24%) with PSE. The concentrations of S100B were higher in patients with epilepsy and PSE than in single seizures (p = 0.0023 and p = 0.0162, respectively). The concentrations of NfL were higher in patients with PSE than in single seizures (p=0.0027). After age-normalization, levels of S100B were higher in patients with epilepsy and levels of NfL were higher in patients with PSE (p = 0.0021 and p = 0.0180).
Conclusion:
Levels of S100B and NfL were higher in patients with epilepsy or PSE than patients with single seizures. Further studies are needed to investigate the biomarker potential of brain injury markers as predictors of epilepsy course or indicators of epileptogenesis
Optical Studies of InGaAs/GaAs Multiple Quantum Wells (MQW\u27s) and GaAs/Si Using Novel Scanning Electron Microscopy Based Techniques
The influence of defects on electron-hole plasma transport in nipi-doped in 0.2Ga0.8As/GaAs multiple quantum wells (MQWs) has been studied using a novel technique called electron beam induced absorption modulation (EBIA) imaging. Modulation doped MQW structures exhibit large optical nonlinearities and are important for the development of all-optical spatial light modulators used in optical computing and communication. The electron-hole plasma is generated by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation induced locally by the electron beam. The influence of structural defects on the diffusive transport of carriers is imaged with a ÎĽm-scale resolution. A strong spatial correlation between dark line defects observed in cathodoluminescence (CL) and absorption modulation steps in EBIA reveals the existence of strain-induced band edge fluctuations that are caused by misfit dislocations. The spatial variation of stress in metalorganic chemical vapor deposition grown GaAs/Si has been studied with linearly polarized cathodoluminescence (LPCL). GaAs grown on Si wafers in selective areas (10 to 1000 ÎĽm mesas) were studied. The large difference in thermal expansion coefficient between GaAs and Si results in thermal stress-induced microcracks and dislocations which can occur upon cooling from growth temperatures. Using LPCL, we have determined the spatial distribution of the stress tensor from the polarized CL strain-split peak positions and solutions to the orbital-strain Hamiltonian
Ternary q-Virasoro-Witt Hom-Nambu-Lie algebras
In this paper we construct ternary -Virasoro-Witt algebras which
-deform the ternary Virasoro-Witt algebras constructed by Curtright, Fairlie
and Zachos using enveloping algebra techniques. The ternary
Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos depend on a
parameter and are not Nambu-Lie algebras for all but finitely many values of
this parameter. For the parameter values for which the ternary Virasoro-Witt
algebras are Nambu-Lie, the corresponding ternary -Virasoro-Witt algebras
constructed in this article are also Hom-Nambu-Lie because they are obtained
from the ternary Nambu-Lie algebras using the composition method. For other
parameter values this composition method does not yield Hom-Nambu Lie algebra
structure for -Virasoro-Witt algebras. We show however, using a different
construction, that the ternary Virasoro-Witt algebras of Curtright, Fairlie and
Zachos, as well as the general ternary -Virasoro-Witt algebras we construct,
carry a structure of ternary Hom-Nambu-Lie algebra for all values of the
involved parameters
The Molecular Line Opacity of MgH in Cool Stellar Atmospheres
A new, complete, theoretical rotational and vibrational line list for the A-X
electronic transition in MgH is presented. The list includes transition
energies and oscillator strengths for all possible allowed transitions and was
computed using the best available theoretical potential energies and dipole
transition moment function with the former adjusted to account for experimental
data. The A-X line list, as well as new line lists for the B'-X and the X-X
(pure rovibrational) transitions, were included in comprehensive stellar
atmosphere models for M, L, and T dwarfs and solar-type stars. The resulting
spectra, when compared to models lacking MgH, show that MgH provides
significant opacity in the visible between 4400 and 5600 Angstrom. Further,
comparison of the spectra obtained with the current line list to spectra
obtained using the line list constructed by Kurucz (1993) show that the Kurucz
list significantly overestimates the opacity due to MgH particularly for the
bands near 5150 and 4800 Angstrom with the discrepancy increasing with
decreasing effective temperature.Comment: 10 pages, 4 figures, 3 table
Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated
from GaAs quantum well (QW) structures of different well width. We first
determine the Lande electron g factor of the QWs through resistive detection of
electron spin resonance and compare it to the enhanced electron g factor
determined from analysis of the magneto-transport. Next, we form laterally
defined quantum dots using these quantum wells and extract the electron g
factor from analysis of the cotunneling and Kondo effect within the quantum
dots. We conclude that the Lande electron g factor of the quantum dot is
primarily governed by the electron g factor of the quantum well suggesting that
well width is an ideal design parameter for g-factor engineering QDs
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