Infrared light emission from semiconductor devices

We present results using near-infrared (NIR) cameras to study emission of common defect classes for integrated circuits. The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 {mu}m. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquid-nitrogen-cooled, slow scan CCD camera (with a spectral range 400-1100 nm). Results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 {mu}m is significantly stronger than at shorter wavelengths

A five-band differential IR photometer for balloon-borne observations of diffuse sky radiation

We have developed a large beam, five-band IR differential photometer, covering the range from 1̃0 to $̃200 μm, devoted to the study of diffuse emission of galactic and extragalactic origins. Here we describe in detail the main features of the experimental apparatus and its calibration. The experiment was flown on a stratospheric balloon on 30 July 1984, collecting data for about 15 hours

A five-band differential IR photometer for balloon-borne observations of diffuse sky radiation

We have developed a large beam, five-band IR differential photometer, covering the range from 1̃0 to $̃200 μm, devoted to the study of diffuse emission of galactic and extragalactic origins. Here we describe in detail the main features of the experimental apparatus and its calibration. The experiment was flown on a stratospheric balloon on 30 July 1984, collecting data for about 15 hours