Spin Hall effect in a system of Dirac fermions in the honeycomb lattice with intrinsic and Rashba spin-orbit interaction

We consider spin Hall effect in a system of massless Dirac fermions in a graphene lattice. Two types of spin-orbit interaction, pertinent to the graphene lattice, are taken into account - the intrinsic and Rashba terms. Assuming perfect crystal lattice, we calculate the topological contribution to spin Hall conductivity. When both interactions are present, their interplay is shown to lead to some peculiarities in the dependence of spin Hall conductivity on the Fermi level.Comment: 7 pages, 5 figure

Non-equilibrium spin polarization effects in spin-orbit coupling system and contacting metallic leads

We study theoretically the current-induced spin polarization effect in a two-terminal mesoscopic structure which is composed of a semiconductor two-dimensional electron gas (2DEG) bar with Rashba spin-orbit (SO) interaction and two attached ideal leads. The nonequilibrium spin density is calculated by solving the scattering wave functions explicitly within the ballistic transport regime. We found that for a Rashba SO system the electrical current can induce spin polarization in the SO system as well as in the ideal leads. The induced polarization in the 2DEG shows some qualitative features of the intrinsic spin Hall effect. On the other hand, the nonequilibrium spin density in the ideal leads, after being averaged in the transversal direction, is independent of the distance measured from the lead/SO system interface, except in the vicinity of the interface. Such a lead polarization effect can even be enhanced by the presence of weak impurity scattering in the SO system and may be detectable in real experiments.Comment: 6 pages,5 figure

Electron spin relaxation in carbon nanotubes

The long standing problem of inexplicably short spin relaxation in carbon nanotubes (CNTs) is examined. The curvature-mediated spin-orbital interaction is shown to induce fluctuating electron spin precession causing efficient relaxation in a manner analogous to the Dyakonov-Perel mechanism. Our calculation estimates longitudinal (spin-flip) and transversal (decoherence) relaxation times as short as 150 ps and 110 ps at room temperature, respectively, along with a pronounced anisotropic dependence. Interference of electrons originating from different valleys can lead to even faster dephasing. The results can help clarify the measured data, resolving discrepancies in the literature.Comment: 9 pages, 3 figure

Phonon-induced decoherence for a quantum dot spin qubit operated by Raman passage

We study single-qubit gates performed via stimulated Raman adiabatic passage (STIRAP) on a spin qubit implemented in a quantum dot system in the presence of phonons. We analyze the interplay of various kinds of errors resulting from the carrier-phonon interaction as well as from quantum jumps related to nonadiabaticity and calculate the fidelity as a function of the pulse parameters. We give quantitative estimates for an InAs/GaAs system and identify the parameter values for which the error is considerably minimized, even to values below $10^{-4}$ per operation.Comment: Final version; considerable extensions; 18 pages, 7 figure

Electron Spin Dynamics in Impure Quantum Wells for Arbitrary Spin-Orbit Coupling

Strong interest has arisen recently on low-dimensional systems with strong spin-orbit interaction due to their peculiar properties of interest for some spintronic applications. Here, the time evolution of the electron spin polarization of a disordered two-dimensional electron gas is calculated exactly within the Boltzmann formalism for arbitrary couplings to a Rashba spin-orbit field. The classical Dyakonov-Perel mechanism of spin relaxation is shown to fail for sufficiently strong Rashba fields, in which case new regimes of spin decay are identified. These results suggest that spin manipulation can be greatly improved in strong spin-orbit interaction materials.Comment: 5 pages, 2 figures -revised versio

Spin relaxation of localized electrons in n-type semiconductors

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.Comment: Submitted to the special issue "Optical Orientation", Semiconductor Science and Technolog

Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures

The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting cases of low and high temperatures. Here we extend the theory to give an accurate description of the intermediate regime which is often relevant for room temperature experiments. Employing the self-consistent multiband envelope function approach, we determine the spin splitting of electron subbands in n-(001) zinc blende semiconductor quantum structures. Using these results we calculate spin relaxation rates as a function of temperature and obtain excellent agreement with experimental data.Comment: 9 pages, 4 figure

Detection of spin polarized currents in quantum point contacts via transverse electron focusing

It has been predicted recently that an electron beam can be polarized when it flows adiabatically through a quantum point contact in a system with spin-orbit interaction. Here, we show that a simple transverse electron focusing setup can be used to detect such polarized current. It uses the amplitude's asymmetry of the spin-split transverse electron focusing peak to extract information about the electron's spin polarization. On the other hand, and depending on the quantum point contact geometry, including this one-body effect can be important when using the focusing setup to study many-body effects in quantum point contacts.Comment: 5 pages, 5 figure

Drift-diffusion model for spin-polarized transport in a non-degenerate 2DEG controlled by a spin-orbit interaction

We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit interaction. In a studied transport regime an electron momentum scattering rate is appreciably faster than spin dynamics. A set of transport equations is defined in terms of a particle density, spin density, and respective fluxes. The developed model allows studying of coherent dynamics of a non-equilibrium spin polarization. As an example, we consider a stationary transport regime for a heterostructure grown along the (0, 0, 1) crystallographic direction. Due to the interplay of the Rashba and Dresselhaus spin-orbit terms spin dynamics strongly depends on a transport direction. The model is consistent with results of pulse-probe measurement of spin coherence in strained semiconductor layers. It can be useful for studying properties of spin-polarized transport and modeling of spintronic devices operating in the diffusive transport regime.Comment: 16 pages, 3 figure