Nanoparticle-induced grain growth of carbon-free solution-processed CuIn(S,Se)2 solar cell with 6% efficiency

Chalcopyrite-based solar cell deposited by solution processes is of great research interest due to ease of fabrication and cost effectiveness. Despite the initial promising results, most of the reported methods encounter challenges such as limited grain growth, Carbon-rich interlayer, high thermal budget and the presence of secondary Cu-rich phases, which limit the power conversion efficiency (PCE). In this paper, we develop a new technique to deposit large grain, Carbon-free CISSe absorber layers from aqueous nanoparticle/precursor mixture which resulted in a solar cell with PCE of 6.2%. CuCl2, InCl3, and thiourea were mixed with CuS and In2S3 nanoparticles in water to form the unique nanoparticle/precursor solution. The Carbon layer formation was prevented because organic solvents were not used in the precursor. The copper-rich (CuS) nanoparticles were intentionally introduced as nucleation sites which accelerate grain growth. In the presence of nanoparticles, the grain size of CISSe film increased by a factor of 7 and the power conversion efficiency of the solar cell is 85% higher than the device without nanoparticle. This idea of using nanoparticles as a means to promote grain growth can be further exploited for other types of chalcopyrite thin film deposited by solution methods.Accepted versio

Spray pyrolysis of CuIn(S,Se)2 solar cells with 5.9% efficiency : a method to prevent Mo oxidation in ambient atmosphere

Direct spray pyrolysis to form CuInS2 (CIS) on molybdenum substrate in ambient environment has been a challenge because of the ease of Mo oxidation at low temperatures. MoO2 formation affects the wettability of precursor solution during spray pyrolysis, which degrades the uniformity of CIS film and acts as a resistive layer for carrier transport. In this paper, Mo oxidation was prevented by using excess sulfur in the precursor solution under a gradual heating and spray process. A thin precursor layer was initially deposited as a barrier layer to prevent oxygen adsorption on Mo surface before the temperature was increased further to form polycrystalline CuInS2. The CuIn(S,Se)2 (CISSe) device fabricated from selenization of the spray-pyrolyzed CIS film exhibited a power conversion efficiency (PCE) of 5.9%. The simple spray method proposed here can be used to deposit a variety of Cu-based chalcopyrite precursor to produce high-quality thin film solar cells