Modeling and characterization of InAs∕GaAs quantum dot lasers grown using metal organic chemical vapor deposition

We report on the lasing characteristics of three- and five-stack InAs∕GaAsquantum dot(QD) lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135nm for device lengths as short as 1.5mm (no reflectivity coatings). The unamplified spontaneous emission and Z ratio as a function of injection current were also investigated. While the five-stack QD lasers behaved as expected with Z ratios of ≈2 prior to lasing, the three-stack QD lasers, which lased from the excited state, exhibited Z-ratio values as high as 4. A simple model was developed and indicated that high Z ratios can be generated by three nonradiative recombination pathways: (i) high monomolecular recombination within the wetting layer, (ii) Auger recombination involving carriers within the QDs (“unmixed” Auger), and (iii) Auger recombination involving both the QD and wetting layer states (“mixed” Auger), which dominate once the excited and wetting layer states become populated.We also acknowledge the financial support of the Australian Research Council

Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

The effect of stress on defect creation and diffusion during impurity-free disordering of SiOₓ-capped n-GaAs epitaxial layers has been investigated using deep level transient spectroscopy. The oxygen content in the SiOₓ layer and the nature of the stress that it imposes on the GaAs layer were varied by changing the nitrous oxideflow rate, N, during plasma-enhanced chemical vapor deposition of the capping layer. The peak intensity of defects S1 and S4 increased with the increasing nitrous oxideflow rate to exhibit a maximum in the range 80 sccm350 sccm. On the other hand, the peak intensity of S2* increased linearly with N. We have explained the maximum in the intensity of defects S1 and S4 for 80 sccm<N<200 sccm to be due to a corresponding maximum in the compressive stress which is experienced by the capped GaAs layer during annealing. Although the creation of S2*, which we have proposed to be a complex involving the galliumvacancy(VGa), is enhanced with the increasing compressive stress, it also becomes efficiently converted into the arsenic-antisite, AsGa. The compound effect of these opposing mechanisms results in a linear dependence of the peak intensity of S2* on N. This study is to the best of our knowledge the first to provide the evidence for the stress-dependent anti-correlation between VGa- and AsGa-related defects in GaAs. We have also narrowed the origin of S1 to complexes involving arsenic interstitials, Asi, and/or AsGa.P. N. K. Deenapanray and H. H. Tan gratefully acknowledge the financial support of the Australian Research Council

Third generation biosensing matrix based on Fe-implanted ZnO thin film

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM−1 cm−2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.We are thankful to DST India and DIISR Australia for a grant under Indo-Australia strategic research initiative. Financial support from UGC is acknowledged by S.S., K.S., and V.G. S.S. is also thankful to University of Delhi for teaching assistantship. The Australian authors acknowledge financial support of the Australian National Council. Facilities at the ANU used in this work are supported by the Australian National Fabrication Facility

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

The electrical isolation of p-type GaAs₁ˍₓNₓ epilayers (x=0.6%, 1.4%, and 2.3%) produced by H, Li, C, or O ion implantation and its thermal stability in nominally undoped GaAs₀.₉₈₆N₀.₀₁₄ epilayers were investigated. Results show that the sheet resistance of p-type GaAsN layers can be increased by about five or six orders of magnitude by ion implantation and the threshold fluence (Fth) to convert a conductive layer to a highly resistive one depends on the original free carrier concentration and the number of implantation-generated atomic displacements, and does not depend on the nitrogen content. The thermal stability of electrical isolation in GaAsN depends on the ratio of the final fluence to the threshold fluence. The electrical isolation can be preserved up to 550 °C when the accumulated fluence is above 3.3 Fth.The authors would like to thank the Commonwealth Department of Education, Science and Training, and the Australian Research Council for financial support

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Highly c-axis oriented ZnOthin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10–50 mTorr) and oxygen percentage (50–100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from −1 × 10¹¹ to −2 × 10⁸ dyne/cm² that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputteringpressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnOthin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnOthin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnOfilm.The authors thank the Department of Science and Technology (India) and Department of Innovation, Industry, Science and Research (Australia) for financial support through Australia-India Strategic Research fund. Facilities used at the ANU are supported by the Australian National Fabrication Facility. One of the authors (C.J.) acknowledges Australian Laureate Fellowship from the Australian Research Council

Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells

The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO∕ZnMgOmultiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.The authors gratefully acknowledge the Australian Research Council for financial support and Swinburne University of Technology for Strategic Initiative funding. One of the authors X.W. acknowledges partial financial support of the Chinese National Natural Science Foundation 10364004 and the Yunnan Natural Science Foundation 2003E0013M

Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

We have used capacitance–voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925 °C. Two electrically active defects HA (EV+0.39 eV) and HB2 (EV+0.54 eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of galliumvacancies causes segregation of Zndopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.Two of the authors ~P.N.K.D. and H.H.T.! acknowledge the financial support of the Australian Research Counci

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well(QW) structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent annealing caused additional injection of Ga into the SiO₂ layer, Ga atoms were still able to outdiffuse from the GaAsQW structure during annealing, to generate excess Ga vacancies. The suppression of interdiffusion with the presence of Ga vacancies was explained by the thermal stress effect which suppressed Ga vacancydiffusion during annealing. It suggests that GaxOy may therefore be used as a mask material in conjunction with other dielectric capping layers in order to control and selectively achieve impurity-free vacancy disordering.J. Wong-Leung, P. N. K. Deenapanray, and H. H. Tan acknowledge the fellowships awarded by the Australian Research Council

Proceedings of the inaugural International Summit for Medical Nutrition Education and Research

© 2016 The Royal Society for Public Health Medical Nutrition Education (MNE) has been identified as an area with potential public health impact. Despite countries having distinctive education systems, barriers and facilitators to effective MNE are consistent across borders, demanding a common platform to initiate global programmes. A shared approach to supporting greater MNE is ideal to support countries to work together. In an effort to initiate this process, the Need for Nutrition Education/Innovation Programme group, in association with their strategic partners, hosted the inaugural International Summit on Medical Nutrition Education and Research on August 8, 2015 in Cambridge, UK. Speakers from the UK, the USA, Canada, Australia, New Zealand, Italy, and India provided insights into their respective countries including their education systems, inherent challenges, and potential solutions across two main themes: (1) Medical Nutrition Education, focused on best practice examples in competencies and assessment; and (2) Medical Nutrition Research, discussing how to translate nutrition research into education opportunities. The Summit identified shared needs across regions, showcased examples of transferrable strategies and identified opportunities for collaboration in nutrition education for healthcare (including medical) professionals. These proceedings highlight the key messages presented at the Summit and showcase opportunities for working together towards a common goal of improvement in MNE to improve public health at large

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Selective growth of InGaAsquantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots.Atomic force microscopy and cathodoluminescence are used for characterization of the selectively growndots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAsquantum well and InGaAsquantum dots on the same wafer is demonstrated. By using a single-step growth,dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.The Australian Research Council is gratefully acknowledged for the financial support