1,161 research outputs found

    Nuclear magnetic resonance spectrum of 31P donors in silicon quantum computer

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    The influence of the electric field created by a gate potential of the silicon quantum computer on the hyperfine interaction constant (HIC) is obtained. The errors due to technological inaccuracy of location of donor atoms under a gate are evaluated. The energy spectra of electron-nuclear spin system of two interacting donor atoms with various values of HIC are calculated. The presence of two pairs of anticrossing levels in the ground electronic state is shown. Parameters of the structure at which errors rate can be greatly minimized are found.Comment: 12 pages,, 3 figure

    Charge qubit entanglement via conditional single-electron transfer in an array of quantum dots

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    We propose a novel scheme to generate entanglement among quantum-dot-based charge qubits via sequential electron transfer in an auxiliary quantum dot structure whose transport properties are conditioned by qubit states. The transfer protocol requires the utilization of resonant optical pulses combined with an appropriate voltage gate pattern. As an example illustrating the application of this scheme, we examine the nine-qubit Shor code state preparation together with the error syndrome measurement

    Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

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    Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells.Comment: 14 pages, pdf fil
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