Strain-induced insulator state in La_0.7Sr_0.3CoO_3

We report on the observation of a strain-induced insulator state in ferromagnetic La_0.7Sr_0.3CoO_3 films. Tensile strain above 1% is found to enhance the resistivity by several orders of magnitude. Reversible strain of 0.15% applied using a piezoelectric substrate triggers huge resistance modulations, including a change by a factor of 10 in the paramagnetic regime at 300 K. However, below the ferromagnetic ordering temperature, the magnetization data indicate weak dependence on strain for the spin state of the Co ions. We interpret the changes observed in the transport properties in terms of a strain-induced splitting of the Co e_g levels and reduced double exchange, combined with a percolation-type conduction in an electronic cluster state

Si-induced superconductivity and structural transformations in DyRh4B4

DyRh4B4 has been known to crystallize in the primitive tetragonal (pt)-structure and to exhibit a ferromagnetic transition at 12 K, the highest magnetic transition temperature in the entire series of the RRh4B4 materials [1]. We show here that our silicon-added samples of the nominal composition DyRh4B4Si0.2 exhibit superconductivity below Tc ~ 4.5 K and an antiferromagnetic transition below TN ~ 2.7 K. The 12 K transition observed in the pt-DyRh4B4 is completely suppressed. Our annealed samples mainly consist of domains of the chemical composition DyRh3.9B4.2Si0.08. These domains contain two crystallographic phases belonging to the body-centred tetragonal (bct)-structure and the orthorhombic (o)-structure. We have reasons to suggest that superconductivity and antiferromagnetic ordering arise from bct- DyRh4B4 phase and, therefore, coexist below TN ~ 2.7 K.Comment: 11 pages, 6 figures, Accepted for publication in Journal of Alloys and Compound

Temperature dependence of trapped magnetic field in MgB2 bulk superconductor

Based on DC magnetization measurements, the temperature dependencies of the trapped magnetic field have been calculated for two MgB2 samples prepared by two different techniques: the high-pressure sintering and the hot pressing. Experimentally measured trapped field values for the first sample coincide remarkably well with calculated ones in the whole temperature range. This proves, from one side, the validity of the introduced calculation approach, and demonstrates, from another side, the great prospects of the hot pressing technology for large scale superconducting applications of the MgB2.Comment: 3 pages, 3 figures, submitted to AP