Frequency-dependent ratchet effect in superconducting films with a tilted washboard pinning potential

The influence of an ac current of arbitrary amplitude and frequency on the mixed-state dc-voltage-ac-drive ratchet response of a superconducting film with a dc current-tilted uniaxial cosine pinning potential at finite temperature is theoretically investigated. The results are obtained in the single-vortex approximation, i.e., for non-interacting vortices, within the frame of an exact solution of the appropriate Langevin equation in terms of a matrix continued fraction. Formulas for the dc voltage ratchet response and absorbed power in ac response are discussed as functions of ac current amplitude and frequency as well as dc current induced tilt in a wide range of corresponding dimensionless parameters. Special attention is paid to the physical interpretation of the obtained results in adiabatic and high-frequency ratchet responses taking into account both running and localized states of the (ac+dc)-driven vortex motion in a washboard pinning potential. Our theoretical results are discussed in comparison with recent experimental work on the high-frequency ratchet response in nanostructured superconducting films [B. B. Jin et al., Phys. Rev. B 81 (2010) 174505].Comment: 13 pages, 11 figure

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$

Refugees, trauma and adversity-activated development

The nature of the refugee phenomenon is examined and the position of mental health professionals is located in relation to it. The various uses of the word 'trauma' are explored and its application to the refugee context is examined. It is proposed that refugees' response to adversity is not limited to being traumatized but includes resilience and Adversity-Activated Development (AAD). Particular emphasis is given to the distinction between resilience and AAD. The usefulness of the 'Trauma Grid' in the therapeutic process with refugees is also discussed. The Trauma Grid avoids global impressions and enables a more comprehensive and systematic way of identifying the individual refugee's functioning in the context of different levels, i.e. individual, family, community and society/culture. Finally, I discuss implications for therapeutic work with refugees

NRG for the bosonic single-impurity Anderson model: Dynamics

The bosonic single-impurity Anderson model (B-SIAM) is studied to understand the local dynamics of an atomic quantum dot (AQD) coupled to a Bose-Einstein condensation (BEC) state, which can be implemented to probe the entanglement and the decoherence of a macroscopic condensate. Our recent approach of the numerical renormalization group (NRG) calculation for the B-SIAM revealed a zero-temperature phase diagram, where a Mott phase with local depletion of normal particles is separated from a BEC phase with enhanced density of the condensate. As an extension of the previous work, we present the calculations of the local dynamical quantities of the B-SIAM which reinforce our understanding of the physics in the Mott and the BEC phases.Comment: 12 pages, 13 figure

Linear Types and Approximation

Published versio

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.Comment: 4 pages, 5 figures, to be published in Phys. Rev. Let