Direct synthesis of -SiC and h-BN coated -SiC nanowires

International audience-Silicon carbide (-SiC) nanowires (NWs) have been grown by thermal treatment of commercial silicon particles disposed in a graphite crucible under nitrogen atmosphere. By the same way, treatment under argon of a mixture of a boron nitride (BN) based powder and silicon particles led to h-BN coated -SiC nanowires. The structures of both nanoobjects have been investigated by HRTEM, EDX and EEL

Synthesis and characterization of cubic silicon carbide (ß-SiC) and trigonal silicon nitride (a-Si3N4) nanowires

International audienceBy varying the final heating temperature in the range 1050°C- 1300°C, cubic silicon carbide (ß-SiC) and/or trigonal silicon nitride (a-Si3N4) nanowires (NWs) were prepared by direct thermal treatment under nitrogen, of commercial silicon powder and graphite. Long and highly curved ß-SiC NWs were preferentially grown below 1200°C, while straight and short a-Si3N4 NWs were formed above 1300°C. Between these two temperatures, a mixture of both nanowires was obtained. The structure and chemical composition of these nanostructures have been investigated by SEM, HRTEM, EDX and EELS

Preparation of β\beta-SiC nanowires and SiC@BN nanocables

Cubic silicon carbide nanowires, $\beta$-SiC NWs, were prepared by the direct heating of a commercial silicon power containing Si nanoparticles and a piece of carbon up to 1200$^{\circ}$C and under a nitrogen flow. The chemical composition of the nanowires was determined by EELS and their crystallographic structure by the mean of electron diffraction. When an amorphous boron nitride powder was added to the starting silicon powder, SiC@BN nanocables were obtained. They consist of a SiC nanowire core sheathed with hexagonal boron nitride

Preparation of -SiC nanowires and SiC@BN nanocables

International audienc

Preparation of -SiC nanowires and SiC@BN nanocables

International audienc