Institutions and contracts: Franchising

Franchising, Institutions, Contracts, Legal systems,

Physical Aspects of Cell Operation and Reliability

This chapter overviews the basic physical effects involved in programming and erasing of Flash memory cells, to provide the background for a deeper understanding of their operation and reliability. In particular, tunnelling and high field transport are treated and the associated phenomena in MOS-FETs and Flash cells are described by means of measurements and simulations. Device degradation induced by charge injection into thin silicon dioxide layers is also briefly discussed