Density of States in Landau Level Tails of GaAs-AlxGa1-xAs Heterostructures

From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the position of the Fermi energy in the mobility gap as a function of the filling factor and therefore the density of states. The measured density of states is best described by a Gaussian like profile superimposed on a constant background

Density of States of GaAs-AlGaAs Heterostructures Deduced from Temperature Dependend Magnetocapacitance Measurements

Abstract We have analyzed the density of states of a two dimensional electron gas in a GaAs- AlGaAs hetereostructure by measuring the magnetocapacitance in magnetic fields up to 6 Tesla at temperatures below 10 K. The experimental data are well described by a Gaussian-like density of states where the linewidth à is proportional to B

Chalker-Coddington model described by an S-matrix with odd dimensions

The Chalker-Coddington network model is often used to describe the transport properties of quantum Hall systems. By adding an extra channel to this model, we introduce an asymmetric model with profoundly different transport properties. We present a numerical analysis of these transport properties and consider the relevance for realistic systems.Comment: 7 pages, 4 figures. To appear in the EP2DS-17 proceeding

Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers

The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current $I$ is smaller than a critical $I_C$, tunneling is large and is effectively shorting the two layers. For $I > I_C$ tunneling becomes negligible. Surprisingly, the transition between the two tunneling regimes has only a minor impact on the features of the filling-factor one state as observed in magneto-transport, but at currents exceeding $I_C$ the resistance along the layers increases rapidly

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.Comment: 3 color figures; publishe

An ultra-bright atom laser

We present a novel, ultra-bright atom-laser and ultra-cold thermal atom beam. Using rf-radiation we strongly couple the magnetic hyperfine levels of 87Rb atoms in a magnetically trapped Bose-Einstein condensate. At low rf-frequencies gravity opens a small hole in the trapping potenital and a well collimated, extremely bright atom laser emerges from just below the condensate. As opposed to traditional atom lasers based on weak coupling, this technique allows us to outcouple atoms at an arbitrarily large rate. We demonstrate an increase in flux per atom in the BEC by a factor of sixteen compared to the brightest quasi-continuous atom laser. Furthermore, we produce by two orders of magnitude the coldest thermal atom beam to date (200 nK).Comment: 20 pages, 9 figures, supplementary material online at http://www.bec.g