DESIGN AND PERFORMANCE ANALYSIS OF FULL ADDER USING 6-T XOR–XNOR CELL

In this paper, the design and simulation of a high-speed, low power 6-T XOR-XNOR circuit is carried out. Also, the design and simulation of 1-bit hybrid full adder (consisting of 16 transistors) using XOR-XNOR circuit, sum, and carry, is performed to improve the area and speed performance. Its performance is being compared with full adder designs with 20 and 18 transistors, respectively. The performance of the proposed circuits is measured by simulating them in Microwind tool using 180 and 90nm CMOS technology. The performance of the proposed circuit is measured in terms of power, delay, and PDP (Power Delay Product)

Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage

In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique

Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage

595-597In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique

Design and analysis of CPW based shunt capacitive RF MEMS switch

This paper is about, the design and analysis of shunt capacitive RF MEMS switch with less actuation voltage, low insertion losses and high isolation losses. The switch design is incorporated the Electrostatics MEMS actuation technique with vertically deforming bridge. In terms of actuation voltage the switch performance is improved by choosing step type actuation structure with holes. The switch Radio Frequency (RF) performance is analysed over the frequency range from 0.6 to 40 GHz. The major achievements in this work are actuation voltage is reduced to 4.2 V for 0.9 μm displacement, the return loss is below −16 dB, the insertion loss is below −0.44 dB, and the isolation loss is −20 dB. The dielectric material used between the membrane and the CPW line is Aluminum Nitride (AlN) with dielectric constant 9.5. The substrate material used for the CPW transmission line is quartz with dielectric constant 3.9. The bridge is designed with meanders, step structure by using gold material with thickness 0.5 μm. The switch upstate capacitance is capacitance ratio of the shunt capacitive switch is 65.22

Design and Simulation of RF MEMS Switch for Wireless Communication Applications

In this paper, we have reported the design and analysis of a novel bulk-silicon fabricated RF MEMS capacitive switch. This RF switch has a short response time, low power consumption, and an IC compatible design. To lower the driving voltage and insertion loss, multiple geometries for the movable beam, membrane, and air gap are investigated using Software tool Comsol Multiphysics. Potential thermal stresses and deflection of the cantilever due to the application of forces have been investigated. Performance of the device under the application of forces also studied using the software

A micro level electrostatically actuated cantilever and metal contact based series RF MEMS switch for multi-band applications

In this paper, a micro level electrostatically actuated cantilever and metal contact based series RF MEMS Switch is designed and analyzed using Finite Element Method Tool. The designed switch is simulated and the performance is verified over the frequency range 0.8–20 GHz. In investigation, it is noticed that the performance of the RF MEMS Switch is decided by the actuation voltage, insertion losses, isolation losses and reliability. The switch designed in this paper achieved a constant insertion losses of −0.08 to −0.14 dB, isolation losses of −58 to −20 dB. This work also concentrated on the cantilever actuation voltage, and it is reduced to 3.55 V by using less weight polymer material like Poly Tetra Fluoro Ethylene (PTFE). The series metal contact based electrostatically driven switching is created in Microstrip Transmission line using cantilever structure associated with gold contact material. The designed RF MEMS switch is preferable in the design and implementation of reconfigurable communication devices like microstrip based antennas and RF filters

Spectroscopic Studies on Distorted Structure Nanomolecules by Using Lie Algebraic Model

We have applied Lie algebraic model to distorted structure molecules to determine the vibrational spectra of different stretching and bending vibrational modes. The the Lie algebraic model of the Hamiltonian expression is H = $E_0 + \sum_{i = 1}^{n} A_{i} C_{i} + \sum_{i < j}^{n} A_{ij} C_{ij} + \sum_{i < j}^{n} \lambda_{ij} M_{ij}$. By using the Lie algebraic method, the stretching vibrational energies of fullerene $(C_{80})$ are calculated in the one-dimensional [U(2)] framework. Using the model Hamiltonian so constructed, we have calculated the local mode vibrational energy levels of the fullerene $(C_{80})$ accurately