Tunable dynamical channel blockade in double-dot Aharonov-Bohm interferometers

We study electronic transport through an Aharonov-Bohm interferometer with single-level quantum dots embedded in the two arms. The full counting statistics in the shot-noise regime is calculated to first order in the tunnel-coupling strength. The interplay of interference and charging energy in the dots leads to a dynamical channel blockade that is tunable by the magnetic flux penetrating the Aharonov-Bohm ring. We find super-Poissonian behavior with diverging second and higher cumulants when the Aharonov-Bohm flux approaches an integer multiple of the flux quantum.Comment: published version, 10 pages, 10 figure

Resonant Tunneling through Multi-Level and Double Quantum Dots

We study resonant tunneling through quantum-dot systems in the presence of strong Coulomb repulsion and coupling to the metallic leads. Motivated by recent experiments we concentrate on (i) a single dot with two energy levels and (ii) a double dot with one level in each dot. Each level is twofold spin-degenerate. Depending on the level spacing these systems are physical realizations of different Kondo-type models. Using a real-time diagrammatic formulation we evaluate the spectral density and the non-linear conductance. The latter shows a novel triple-peak resonant structure.Comment: 4 pages, ReVTeX, 4 Postscript figure

Quantum tunneling through planar p-n junctions in HgTe quantum wells

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction. The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong Rashba spin-orbit interaction.Comment: 4 pages, 4 figure

Frequency-Dependent Current Noise through Quantum-Dot Spin Valves

We study frequency-dependent current noise through a single-level quantum dot connected to ferromagnetic leads with non-collinear magnetization. We propose to use the frequency-dependent Fano factor as a tool to detect single-spin dynamics in the quantum dot. Spin precession due to an external magnetic and/or a many-body exchange field affects the Fano factor of the system in two ways. First, the tendency towards spin-selective bunching of the transmitted electrons is suppressed, which gives rise to a reduction of the low-frequency noise. Second, the noise spectrum displays a resonance at the Larmor frequency, whose lineshape depends on the relative angle of the leads' magnetizations.Comment: 12 pages, 15 figure

Influence of disorder on the ferromagnetism in diluted magnetic semiconductors

Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean field approximation and from the analysis of the zero temperature spin stiffness. Due to disorder, the spin wave fluctuations around the ferromagnetically ordered state acquire a finite mass. At large charge carrier band width, the spin wave mass squared becomes negative, signaling the breakdown of the ferromagnetic ground state and the onset of a noncollinear magnetic order.Comment: Replaced with revised version. 10 pages, 3 figure

Cotunneling at resonance for the single-electron transistor

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.Comment: 5 pages, Revtex, 5 eps-figure

Contribution of Scalar Loops to the Three-Photon Decay of the Z

I corrected 3 mistakes from the first version: that were an omitted Feynman integration in the function f^3_{ij}, a factor of 2 in front of log f^3_{ij} in eq.2 and an overall factor of 2 in Fig.1 c). The final result is changed drastically. Doing an expansion in the Higgs mass I show that the matrix element is identically 0 in the order (MZ/MH)^2, which is due to gauge invariance. Left with an amplitude of the order (MZ/MH)^4 the final result is that the scalar contribution to this decay rate is several orders of magnitude smaller than those of the W boson and fermions.Comment: 6 pages, plain Tex, 1 figure available under request via fax or mail, OCIP/C-93-5, UQAM-PHE-93/0

Adiabatic pumping through interacting quantum dots

We present a general formalism to study adiabatic pumping through interacting quantum dots. We derive a formula that relates the pumped charge to the local, instantaneous Green function of the dot. This formula is then applied to the infinite-U Anderson model both for weak and strong tunnel-coupling strengths.Comment: 4 pages, 3 figure

Real-time renormalization group and cutoff scales in nonequilibrium applied to an arbitrary quantum dot in the Coulomb blockade regime

We apply the real-time renormalization group (RG) in nonequilibrium to an arbitrary quantum dot in the Coulomb blockade regime. Within one-loop RG-equations, we include self-consistently the kernel governing the dynamics of the reduced density matrix of the dot. As a result, we find that relaxation and dephasing rates generically cut off the RG flow. In addition, we include all other cutoff scales defined by temperature, energy excitations, frequency, and voltage. We apply the formalism to transport through single molecular magnets, realized by the fully anisotropic Kondo model (with three different exchange couplings J_x, J_y, and J_z) in a magnetic field h_z. We calculate the differential conductance as function of bias voltage V and discuss a quantum phase transition which can be tuned by changing the sign of J_x J_y J_z via the anisotropy parameters. Finally, we calculate the noise S(Omega) at finite frequency Omega for the isotropic Kondo model and find that the dephasing rate determines the height of the shoulders in dS(\Omega)/d Omega near Omega=V.Comment: 16 pages, 7 figure

Disorder-Induced Multiple Transition involving Z2 Topological Insulator

Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder strength and magnitude of the energy gap. In the presence of sz non-conserving spin-orbit coupling, a finite metallic region is found that partitions the two topologically distinct insulating phases. As disorder increases, a narrow-gap topologically trivial insulator undergoes a series of transitions; first to metal, second to topological insulator, third to metal, and finally back to trivial insulator. We show that this multiple transition is a consequence of two disorder effects; renormalization of the band gap, and Anderson localization. The metallic region found in the scaling analysis corresponds roughly to the region of finite density of states at the Fermi level evaluated in the self-consistent Born approximation.Comment: 5 pages, 5 figure