A 2,2′-bipyridine-palladacycle catalyzed the coupling of arylboronic acids with nitroarenes

AbstractA novel palladium-catalyzed protocol for the synthesis of diaryl ethers derivatives has been developed. In the presence of 2,2′-bipyridine-cyclopalladated ferrocenylimine complex (Cat. Ic), diaryl ethers were selectively generated by adjusting reaction parameters through the coupling of arylboronic acids and nitroarenes with yields ranging from poor to good. The efficiency of this reaction was demonstrated by its compatibility with a range of groups. Moreover, the rigorous exclusion of air or moisture was not required in these transformations

An Advanced Persistent Distributed Denial-of-Service Attacked Dynamical Model on Networks

The advanced persistent distributed denial-of-service (APDDoS) attack does a serious harm to cyber security. Establishing a mathematical model to accurately predict APDDoS attack on networks is still an important problem that needs to be solved. Therefore, to help us understand the attack mechanisms of APDDoS on networks, this paper first puts forward a novel dynamical model of APDDoS attack on networks. A systematic analysis of this new model shows that the maximum eigenvalue of the networks is a vital factor that determines the success or failure of the attack. What is more, a new sufficient condition for the global stability of attack-free equilibrium is obtained. The global attractivity of attacked equilibrium has also been proved. Eventually, this paper gives some numerical simulations to show the main results

Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlOx Gate Dielectrics

Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm2 V−1s−1). However, the capacitance uncertainty of the solution-processed oxide gate dielectrics leads to serious overestimation of the mobility. Here, solution-processed AlOx dielectrics are investigated systematically, and the effect of mobile ions on the frequency-dependent capacitance of the solution-processed AlOx dielectrics is also studied. It was found that the capacitance of the AlOx depends on the frequency seriously when the annealing temperature is lower than 300 °C, and the water treatment causes more seriously frequency-dependent capacitance. The strong frequency-dependent capacitance of the AlOx annealed at 250 or 300 °C is attributed to relaxation polarization of the weakly bound ions in the incompletely decomposed AlOx films. The water treatment introduces a large number of protons (H+) that would migrate to the ITO/AlOx interface under a certain electric field and form an electric double layer (EDL) that has ultrahigh capacitance at low frequency

FNC efficiently inhibits mantle cell lymphoma growth.

FNC, 2'-deoxy-2'-β-fluoro-4'-azidocytidine, is a novel cytidine analogue, that has shown strong antiproliferative activity in human lymphoma, lung adenocarcinoma and acute myeloid leukemia. In this study, we investigated the effects of FNC on mantle cell lymphoma (MCL) and the underlying mechanisms. In in vitro experiments, cell viability was detected by the CCK8 assay, and cell cycle progression and apoptosis were assessed by flow cytometry, and the expression of relative apoptosis proteins were detected by Western Blot. The in vivo antitumor effect of FNC was investigated in a SCID xenograft model. Finally, the mechanisms of action of FNC were assessed using a whole human genome expression profile chip. The data showed that FNC inhibited cell growth in a dose- and time-dependent manner, and FNC could induce apoptosis by the death recepter pathways in JeKo-1 cells and arrest the cell cycle in the G1/S or G2/M phase. Notably, FNC showed in vivo efficacy in mice bearing JeKo-1 xenograft tumors. Gene expression profile analysis revealed that the differentially expressed genes were mainly focused on the immune system process, cellular process and death. These findings implied that FNC may be a valuable therapeutic in mantle cell lymphoma and provided an experimental basis for the early clinical application of FNC

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously

Inverted structure polymer solar cells with solution processed zinc oxide thin film as an electron collection Layer

A solution-processed zinc oxide (ZnO) thin film as an electron collection layer for polymer solar cells (PSCs) with an inverted device structure was investigated. Power conversion efficiencies (PCEs) of PSCs made with a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) are 3.50% and 1.21% for PSCs with and without the ZnO thin film, respectively. Light intensity dependence of the photocurrent and the capacitance-voltage measurement demonstrate that the increased PCEs are due to the restriction of the strong bimolecular recombination in the interface when a thin ZnO layer is inserted between the polymer active layer and the ITO electrode. These results demonstrate that the ZnO thin film plays an important role in the performance of PSCs with an inverted device structure

Recent Advances in Flexible Resistive Random Access Memory

Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and processing is an important part. Due to its simple structure and non-volatile characteristics, flexible resistive random access memory (RRAM) is the most likely flexible memory to achieve full commercialization. At present, the minimum bending radius of flexible RRAM can reach 2 mm and the maximum ON/OFF ratio (storage window) can reach 108. However, there are some defects in reliability and durability. In the bending process, the cracks are the main cause of device failure. The charge trap sites provided by appropriate doping or the use of amorphous nanostructures can make the conductive filaments of flexible RRAM steadier. Flexible electrodes with high conductivity and flexible dielectric with stable storage properties are the main development directions of flexible RRAM materials in the future