Observation of a linear temperature dependence of the critical current density in a Ba_{0.63}K_{0.37}BiO_3 single crystal

For a Ba_{0.63}K_{0.37}BiO_3 single crystal with T_c=31 K, H_{c1}=750 Oe at 5 K, and dimensions 3x3x1 mm^3, the temperature and field dependences of magnetic hysteresis loops have been measured within 5-25 K in magnetic fields up to 6 Tesla. The critical current density is J_c(0)=1.5 x 10^5 A/cm^2 at zero field and 1 x 10^5 A/cm^2 at 1 kOe at 5 K. J_c decreases exponentially with increasing field up to 10 kOe. A linear temperature dependence of J_c is observed below 25 K, which differs from the exponential and the power-law temperature dependences in high-Tc superconductors including the BKBO. The linear temperature dependence can be regarded as an intrinsic effect in superconductors.Comment: RevTex, Physica C Vol. 341-348, 729 (2000

Protein synthesis and degradation are required for the incorporation of modified information into the pre-existing object-location memory

Although some reports indicate that protein synthesis dependent process may be induced by updating information, the role of protein synthesis and degradation in changing the content of pre-existing memory is yet unclear. In this study, we utilized an object rearrangement task, in which partial information related to a pre-existing memory is changed, promoting memory modification. Inhibitors of both protein synthesis and protein degradation impaired adequate incorporation of the altered information, each in a distinctive way. These results indicate that protein synthesis and degradation play key roles in memory modification

Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition

We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commercial bolometer.Comment: 3 pages, 4 figures, This was presented in NANOMAT 2006 "International workshop on nanostructed materials" on June 21-23th of 2006 in Antalya/TURKE

Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.Comment: 4 pages, 3 figure