38 research outputs found

    Fluctuation-induced tunneling conduction through RuO2_2 nanowire contacts

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    A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current-voltage (II-VV) characteristics of nanocontacts between single metallic RuO2_2 nanowires (NWs) and contacting Au electrodes which were pre-patterned by simple photolithography. Both the temperature behavior of contact resistance in the low-bias voltage ohmic regime and the II-VV curves in the high-bias voltage non-ohmic regime have been investigated. We found that the electronic conduction processes in the wide temperature interval 1--300 K can be well described by the fluctuation-induced tunneling (FIT) conduction theory. Taken together with our previous work (Lin {\it et al.}, Nanotechnology {\bf 19}, 365201 (2008)) where the nanocontacts were fabricated by delicate electron-beam lithography, our study demonstrates the general validity of the FIT model in characterizing electronic nanocontacts.Comment: 6 pages, 5 figure

    Electron-electron scatttering in Sn-doped indium oxide thick films

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    We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature TT range 4--35 K. The electron dephasing rate 1/τφ1/\tau_{\varphi} as a function of TT for each film was extracted by comparing the MR data with the three-dimensional (3D) weak-localization theoretical predictions. We found that the extracted 1/τφ1/\tau_{\varphi} varies linearly with T3/2T^{3/2}. Furthermore, at a given TT, 1/τφ1/\tau_{\varphi} varies linearly with kFβˆ’5/2lβˆ’3/2k_F^{-5/2}l^{-3/2}, where kFk_{F} is the Fermi wavenumber, and ll is the electron elastic mean free path. These features are well explained in terms of the small-energy-transfer electron-electron scattering time in 3D disordered conductors. This electron dephasing mechanism dominates over the electron-phonon (ee-ph) scattering process because the carrier concentrations in our films are ∼\sim 3 orders of magnitude lower than those in typical metals, which resulted in a greatly suppressed ee-ph relaxation rate.Comment: 5 pages, 3 figure

    Direct Observation of Long-Term Durability of Superconductivity in YBa2_2Cu3_3O7_7-Ag2_2O Composites

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    We report direct observation of long-term durability of superconductivity of several YBa2_2Cu3_3O7_7-Ag2_2O composites that were first prepared and studied almost 14 years ago [J. J. Lin {\it et al}., Jpn. J. Appl. Phys. {\bf 29}, 497 (1990)]. Remeasurements performed recently on both resistances and magnetizations indicate a sharp critical transition temperature at 91 K. We also find that such long-term environmental stability of high-temperature superconductivity can only be achieved in YBa2_2Cu3_3O7_7 with Ag2_2O addition, but not with pure Ag addition.Comment: to be published in Jpn. J. Appl. Phy
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