26 research outputs found

    Thermal expansion and impurity effects on lattice thermal conductivity of solid argon

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    Thermal expansion and impurity effects on the lattice thermal conductivity of solid argon have been investigated with equilibrium molecular dynamics simulation. Thermal conductivity is simulated over the temperature range of 20 – 80 K. Thermal expansion effects, which strongly reduce thermal conductivity, are incorporated into the simulations using experimentally measured lattice constants of solid argon at different temperatures. It is found that the experimentally measured deviations from a T-1 high-temperature dependence in thermal conductivity can be quantitatively attributed to thermal expansion effects. Phonon scattering on defects also contributes to the deviations. Comparison of simulation results on argon lattices with vacancy and impurity defects to those predicted from the theoretical models of Klemens and Ashegi et al. demonstrates that phonon scattering on impurities due to lattice strain is stronger than that due to differences in mass between the defect and the surrounding matrix. In addition, the results indicate the utility of molecular dynamics simulation for determining parameters in theoretical impurity scattering models under a wide range of conditions. It is also confirmed from the simulation results that thermal conductivity is not sensitive to the impurity concentration at high temperatures

    Molecular Dynamics Study of the Lattice Thermal Conductivity of Kr/Ar Superlattice Nanowires

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    The nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity. Results show that interface scattering poses significant resistance to phonon transport in superlattices and superlattice nanowires. The thermal conductivity of the Kr/Ar superlattice nanowire is only about 1/3 of that for pure Ar nanowires with the same cross sectional area and total length due to the additional interfacial thermal resistance. It is found that nanowire boundary scattering provides significant resistance to phonon transport. As the cross sectional area increases, the nanowire boundary scattering decreases, which leads to increased nanowire thermal conductivity. The ratio of the interfacial thermal resistance to the total effective thermal resistance increases from 30% for the superlattice nanowire to 42% for the superlattice film. Period length is another important factor affecting the effective thermal conductivity of the nanostructures. Increasing the period length will lead to increased acoustic mismatch between the adjacent layers, and hence increased interfacial thermal resistance. However, if the total length of the superlattice nanowire is fixed, reducing the period length will lead to decreased effective thermal conductivity due to the increased number of interfaces. Finally, it is found that the interfacial thermal resistance decreases as the reference temperature increases, which might be due to the inelastic interface scattering

    The contact area dependent interfacial thermal conductance

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    The effects of the contact area on the interfacial thermal conductance σ are investigated using the atomic Green’s function method. Different from the prediction of the heat diffusion transport model, we obtain an interesting result that the interfacial thermal conductance per unit area Λ is positively dependent on the contact area as the area varies from a few atoms to several square nanometers. Through calculating the phonon transmission function, it is uncovered that the phonon transmission per unit area increases with the increased contact area. This is attributed to that each atom has more neighboring atoms in the counterpart of the interface with the increased contact area, which provides more channels for phonon transport
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