A Simulator for EUV Lithography Mirrors

The design of a simulator for EUV lithography mirrors is presented. A method of computing the expected value of reflectance and transmittance in stratified absorbing media with rough interfaces, based on Jay Eastman’s matrix formalism for scattered fields, was developed. In addition, a proof of principle experiment confirmed process feasibility for EUV mirror research at RIT

The Journal of Microelectronic Research 2009

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