Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies

Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600{\deg}C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surfaceComment: 20 pages,11 figure

Low-Density Particleboards Modified with Expanded and Unexpanded Fillers—Characteristics and Properties

Reducing the density of wood-based materials is a desirable research direction in the development of the wood-based materials sector. Even though lightweight wooden particleboards have been commercially available for many years, they still have a number of disadvantages, especially their low strength parameters. The aim of this paper was to determine the possibility of producing particleboards of reduced density for use in the furniture industry, as a result of using expanded polystyrene and two types of microspheres (expanded and unexpanded) to modify the core layer of three-layer particleboards. Analysis of the results of testing the particleboards’ properties when using various types of modifiers (expanded and unexpanded fillers), urea formaldehyde (UF) glue content (high: 10%/12% and low: 8%/10%), various glue-dosing methods, and different particle sizes, allows us to conclude that the most satisfactory effect was found when using EPS. One partly positive effect was observed when using the Expancel-type 031 DU 40 as a filler; therefore, it is recommended that research be continued in this area. Using microspheres that have not been used before as a filler in the production of wood-based panels is the novelty of the presented research. The proposed technology has potential for application in the industry

The Influence of Annealing on the Optical Properties and Microstructure Recrystallization of the TiO2 Layers Produced by Means of the E-BEAM Technique

Titanium dioxide films, about 200 nm in thickness, were deposited using the e-BEAM technique at room temperature and at 227 °C (500K) and then annealed in UHV conditions (as well as in the presence of oxygen (at 850 °C). The fabricated dielectric films were examined using X-ray powder diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and spectroscopic ellipsometry. The applied experimental techniques allowed us to characterize the phase composition and the phase transformation of the fabricated TiO2 coatings. The films produced at room temperature are amorphous but after annealing consist of anatase crystallites. The layers fabricated at 227 °C contain both anatase and rutile phases. In this case the anatase crystallites are accumulated near the substrate interface whilst the rutile crystallites were formed closer to the surface of the TiO2 film. It should be emphasized that these two phases of TiO2 are distinctly separated from each other

Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite material

Self-organized (Ga,Mn)As nanoclusters, embedded in GaAs and formed during thermal annealing of Ga1-xMnxAs layer at 500 degrees C or 600 degrees C, were studied using Transmission Electron Microscopy (TEM) and Magnetic Force Microscopy (MFM). We found that 10-20 nm large NiAs-type hexagonal MnAs nanocrystals gave magnetic contrast in MFM images, whereas smaller zinc-blende nanoinclusions were not visible by means of this technique. Theoretical simulations showed that MFM contrasts reflect interaction between magnetic tip and many randomly distributed MnAs nanocrystals