Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.Kavli Institute of NanoscienceApplied Science

Single Dopant Implantation into a Nanoscale MOSFET Devices

QN/Quantum NanoscienceApplied Science

Single Ion Implantation into Si-Based Devices

Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized PiN structures where ions are directed onto a target area around which a field effect transistor can be formed. The second approach involves monitoring the drain current modulation during ion irradiation. We investigate the detection of both high energy He+ and 14 keV P+ dopants. The stopping of these ions is dominated by ionization and nuclear collisions, respectively. The optimization of the implant energy for a particular device and post-implantation processing are also briefly considered.QN/Quantum NanoscienceApplied Science