Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X

We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data