Direct observation of the ground state of a 1/3 quantum magnetization plateau in SrMn3_3P4_4O14_{14} using neutron diffraction measurements

We can directly investigate the ground state in magnetization-plateau fields (plateau ground state) using neutron diffraction measurements. We performed neutron diffraction measurements on the spin-5/2 trimer substance SrMn$_3$P$_4$O$_{14}$ in magnetization-plateau fields. The integrated intensities of magnetic reflections calculated using an expectation value of each spin in a plateau ground state of an isolated-trimer model agree well with those obtained experimentally in the magnetization-plateau fields. We succeeded in direct observation of a plateau ground state in SrMn$_3$P$_4$O$_{14}$

Spin transport and accumulation in the persistent photoconductor Al0.3_{0.3}Ga0.7_{0.7}As

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition