Virtual contributions from D∗(2007)0D^{\ast}(2007)^0 and D∗(2010)±D^{\ast}(2010)^{\pm} in the B→DπhB\to D\pi h decays

We study the quasi-two-body decays $B\to D^*h \to D\pi h$ with $h=(\pi, K)$ in the perturbative QCD approach and focus on the virtual contributions from the off-shell $D^{\ast}(2007)^0$ and $D^{\ast}(2010)^{\pm}$ in the four measured decays $\bar B^0 \to D^0\pi^+\pi^-$, $\bar B^0\to D^0\pi^+K^-$, $B^- \to D^+\pi^-\pi^-$ and $B^- \to D^+\pi^-K^-$. For the $\bar B^0 \to D^{*+}\pi^-\to D^0\pi^+\pi^-$ and $\bar B^0\to D^{*+}K^-\to D^0\pi^+K^-$ decays, their branching fractions concentrate in a very small region of $m_{D^0\pi^+}$ near $D^{*+}$ pole mass, and the virtual contributions from $D^{*+}$, in the region $m_{D^0\pi^+}>2.1$ GeV, are about $5\%$ of the corresponding quasi-two-body results. We define two ratios $R_{D^{*+}}$ and $R_{D^{*0}}$, from which we conclude that the flavor-$SU(3)$ symmetry will be maintained for the $B\to D^* h\to D\pi h$ decays with very small breaking at any physical value of the $m_{D\pi}$. The $B^-\to D^{*0}\pi^-\to D^0\pi^0\pi^-$ and $B^-\to D^{*0}K^-\to D^0\pi^0K^-$ decays can be employed as a constraint for the $D^{*0}$ decay width, with preferred values consistent with previous theoretical predictions for this quantity.Comment: 12 pages, 5 figures. Published versio

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs, which result in the potential pinning effect and deteriorate the gate control. While, on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, in which edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, device performance of BP He-TFETs can be further optimized and fulfill the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along armchair direction on-state current can reach above 10$^3$ $\mu$A/$\mu$m with the fixed off-state current of 10 $pA/\mu$m. It is also found that ambipolar effect can be effectively suppressed in BP He-TFETs.Comment: 12 pages, 5 figure

Extremely long-lived universal resonant Bose gases

Quantum simulations based on near-resonance Bose gases are limited by their short lifetimes due to severe atom losses. In addition to this, the recently predicted thermodynamical instability adds another constraint on accessing the resonant Bose gases. In this Letter, we offer a potential solution by proposing long-lived resonant Bose gases in both two and three dimensions, where the conventional few-body losses are strongly suppressed. We show that the thermodynamical properties as well as the lifetimes of these strongly interacting systems are universal, and independent of short-range physics.Comment: 5 page