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Photoluminescence pressure coefficients of InAs/GaAs quantum dots
We have investigated the band-gap pressure coefficients of self-assembled
InAs/GaAs quantum dots by calculating 17 systems with different quantum dot
shape, size, and alloying profile using atomistic empirical pseudopotential
method within the ``strained linear combination of bulk bands'' approach. Our
results confirm the experimentally observed significant reductions of the band
gap pressure coefficients from the bulk values. We show that the nonlinear
pressure coefficients of the bulk InAs and GaAs are responsible for these
reductions. We also find a rough universal pressure coefficient versus band gap
relationship which agrees quantitatively with the experimental results. We find
linear relationships between the percentage of electron wavefunction on the
GaAs and the quantum dot band gaps and pressure coefficients. These linear
relationships can be used to get the information of the electron wavefunctions.Comment: 8 pages, 2 tables, 4 figure
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