Role of strain in the blistering of hydrogen-implanted silicon

The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters. © 2006 American Institute of Physics

Structure and optical properties of Lu <inf>2</inf>SiO <inf>5</inf>:Ce phosphor thin films

Luminescent, cerium doped Lu 2SiO 5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150°C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce 3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600°C. These conditions reflect a balance between Ce 4+/Ce 3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials. © 2006 American Institute of Physics

Optical property and Stokes' shift of Zn <inf>1-x</inf>Cd <inf>x</inf>O thin films depending on Cd content

Ternary Zn1-x Cdx O films were grown on (0001) sapphire substrates by pulsed laser deposition. The energy band gap of Zn1-x Cdx O films decreases with increasing Cd content. An increase of Cd content also leads to the emission broadening, absorption edge broadening, and crystallinity degradation. The absorption edge and ultraviolet emission energy shift to lower energy from 3.357 eV to 3.295 eV and 3.338 eV to 3.157 eV, respectively, with increasing Cd content from 0.3% to 3% at 4 K. The Stokes' shift between the absorption and emission is observed and that indicates the increase of exciton localization with Cd content. © 2006 American Institute of Physics

Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation

We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner. © 2005 American Institute of Physics

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si Si0.98 B0.02 Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98 B0.02 layer. For hydrogenated Si containing a 130 nm thick Si0.98 B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98 B0.02 layer to 3 nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation. © 2006 American Institute of Physics

Self-Cleaning Glass of Photocatalytic Anatase TiO2@Carbon Nanotubes Thin Film by Polymer-Assisted Approach

Due to the good photocatalytic activity, the TiO2@CNTs thin film is highly desirable to apply to the self-cleaning glass for green intelligent building. Here, the TiO2@CNTs thin film has been successfully achieved by polymer-assisted approach of an aqueous chemical solution method. The polymer, polyethylenimine, aims to combine the Ti4+ with CNTs for film formation of TiO2@CNTs. The resultant thin film was uniform, highly transparent, and super-hydrophilic. Owing to fast electron transport and effectively hindering electron-hole recombination, the TiO2@CNTs thin film has nearly twofold photocatalytic performance than pure TiO2. The TiO2@CNTs thin films show a good application for self-cleaning glasses

One-Pot Green Synthesis and Bioapplication ofl-Arginine-Capped Superparamagnetic Fe3O4 Nanoparticles

Water-solublel-arginine-capped Fe3O4 nanoparticles were synthesized using a one-pot and green method. Nontoxic, renewable and inexpensive reagents including FeCl3,l-arginine, glycerol and water were chosen as raw materials. Fe3O4 nanoparticles show different dispersive states in acidic and alkaline solutions for the two distinct forms of surface bindingl-arginine. Powder X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the structure of Fe3O4 nanocrystals. The products behave like superparamagnetism at room temperature with saturation magnetization of 49.9 emu g−1 and negligible remanence or coercivity. In the presence of 1-ethyl-3-(dimethylaminopropyl) carbodiimide hydrochloride, the anti-chloramphenicol monoclonal antibodies were connected to thel-arginine-capped magnetite nanoparticles. The as-prepared conjugates could be used in immunomagnetic assay

Nuclear Calcium Signaling Controls Expression of a Large Gene Pool: Identification of a Gene Program for Acquired Neuroprotection Induced by Synaptic Activity

Synaptic activity can boost neuroprotection through a mechanism that requires synapse-to-nucleus communication and calcium signals in the cell nucleus. Here we show that in hippocampal neurons nuclear calcium is one of the most potent signals in neuronal gene expression. The induction or repression of 185 neuronal activity-regulated genes is dependent upon nuclear calcium signaling. The nuclear calcium-regulated gene pool contains a genomic program that mediates synaptic activity-induced, acquired neuroprotection. The core set of neuroprotective genes consists of 9 principal components, termed Activity-regulated Inhibitor of Death (AID) genes, and includes Atf3, Btg2, GADD45β, GADD45γ, Inhibin β-A, Interferon activated gene 202B, Npas4, Nr4a1, and Serpinb2, which strongly promote survival of cultured hippocampal neurons. Several AID genes provide neuroprotection through a common process that renders mitochondria more resistant to cellular stress and toxic insults. Stereotaxic delivery of AID gene-expressing recombinant adeno-associated viruses to the hippocampus confers protection in vivo against seizure-induced brain damage. Thus, treatments that enhance nuclear calcium signaling or supplement AID genes represent novel therapies to combat neurodegenerative conditions and neuronal cell loss caused by synaptic dysfunction, which may be accompanied by a deregulation of calcium signal initiation and/or propagation to the cell nucleus