15,471 research outputs found
Designer Topological Insulators in Superlattices
Gapless Dirac surface states are protected at the interface of topological
and normal band insulators. In a binary superlattice bearing such interfaces,
we establish that valley-dependent dimerization of symmetry-unrelated Dirac
surface states can be exploited to induce topological quantum phase
transitions. This mechanism leads to a rich phase diagram that allows us to
design strong, weak, and crystalline topological insulators. Our ab initio
simulations further demonstrate this mechanism in [111] and [110] superlattices
of calcium and tin tellurides.Comment: 5 pages, 4 figure
Giant and tunable valley degeneracy splitting in MoTe2
Monolayer transition-metal dichalcogenides possess a pair of degenerate
helical valleys in the band structure that exhibit fascinating optical valley
polarization. Optical valley polarization, however, is limited by carrier
lifetimes of these materials. Lifting the valley degeneracy is therefore an
attractive route for achieving valley polarization. It is very challenging to
achieve appreciable valley degeneracy splitting with applied magnetic field. We
propose a strategy to create giant splitting of the valley degeneracy by
proximity-induced Zeeman effect. As a demonstration, our first principles
calculations of monolayer MoTe on a EuO substrate show that valley
splitting over 300 meV can be generated. The proximity coupling also makes
interband transition energies valley dependent, enabling valley selection by
optical frequency tuning in addition to circular polarization. The valley
splitting in the heterostructure is also continuously tunable by rotating
substrate magnetization. The giant and tunable valley splitting adds a readily
accessible dimension to the valley-spin physics with rich and interesting
experimental consequences, and offers a practical avenue for exploring device
paradigms based on the intrinsic degrees of freedom of electrons.Comment: 8 pages, 5 figures, 1 tabl
Association of interleukin 10 rs1800896 polymorphism with susceptibility to breast cancer: a meta-analysis.
Objective: To evaluate the correlation between interleukin 10 (IL-10) -1082A/G polymorphism (rs1800896) and breast cancers by performing a meta-analysis.
Methods: The Embase and Medline databases were searched through 1 September 2018 to identify qualified articles. Odds ratios (OR) and corresponding 95% confidence intervals (CIs) were applied to evaluate associations.
Results: In total, 14 case-control studies, including 5320 cases and 5727 controls, were analyzed. We detected significant associations between the IL10 -1082 G/G genotype and risk of breast cancer (AA + AG vs. GG: OR = 0.88, 95% CI = 0.80-0.97). Subgroup analyses confirmed a significant association in Caucasian populations (OR = 0.89, 95% CI = 0.80-0.99), in population-based case-control studies (OR = 0.87, 95% CI = 0.78-0.96), and in studies with ≥500 subjects (OR = 0.88, 95% CI = 0.79-0.99) under the recessive model (AA + AG vs. GG). No associations were found in Asian populations.
Conclusions: The IL10 -1082A/G polymorphism is associated with an increased risk of breast cancer. The association between IL10 -1082 G/G genotype and increased risk of breast cancer is more significant in Caucasians, in population-based studies, and in larger studies
A relation between multiplicity of nonzero eigenvalues and the matching number of graph
Let be a graph with an adjacent matrix . The multiplicity of an
arbitrary eigenvalue of is denoted by . In
\cite{Wong}, the author apply the Pater-Wiener Theorem to prove that if the
diameter of at least , then for any
. Moreover, they characterized all trees with
, where is the induced matching number of
.
In this paper, we intend to extend this result from trees to any connected
graph. Contrary to the technique used in \cite{Wong}, we prove the following
result mainly by employing algebraic methods: For any non-zero eigenvalue
of the connected graph , , where
is the cyclomatic number of , and the equality holds if and only if
or , or a tree with the diameter is at most
. Furthermore, if , we characterize all connected graphs
with
Coupling the valley degree of freedom to antiferromagnetic order
Conventional electronics are based invariably on the intrinsic degrees of
freedom of an electron, namely, its charge and spin. The exploration of novel
electronic degrees of freedom has important implications in both basic quantum
physics and advanced information technology. Valley as a new electronic degree
of freedom has received considerable attention in recent years. In this paper,
we develop the theory of spin and valley physics of an antiferromagnetic
honeycomb lattice. We show that by coupling the valley degree of freedom to
antiferromagnetic order, there is an emergent electronic degree of freedom
characterized by the product of spin and valley indices, which leads to
spin-valley dependent optical selection rule and Berry curvature-induced
topological quantum transport. These properties will enable optical
polarization in the spin-valley space, and electrical detection/manipulation
through the induced spin, valley and charge fluxes. The domain walls of an
antiferromagnetic honeycomb lattice harbors valley-protected edge states that
support spin-dependent transport. Finally, we employ first principles
calculations to show that the proposed optoelectronic properties can be
realized in antiferromagnetic manganese chalcogenophosphates (MnPX_3, X = S,
Se) in monolayer form.Comment: 6 pages, 5 figure
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