15,471 research outputs found

    Designer Topological Insulators in Superlattices

    Full text link
    Gapless Dirac surface states are protected at the interface of topological and normal band insulators. In a binary superlattice bearing such interfaces, we establish that valley-dependent dimerization of symmetry-unrelated Dirac surface states can be exploited to induce topological quantum phase transitions. This mechanism leads to a rich phase diagram that allows us to design strong, weak, and crystalline topological insulators. Our ab initio simulations further demonstrate this mechanism in [111] and [110] superlattices of calcium and tin tellurides.Comment: 5 pages, 4 figure

    Giant and tunable valley degeneracy splitting in MoTe2

    Full text link
    Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of these materials. Lifting the valley degeneracy is therefore an attractive route for achieving valley polarization. It is very challenging to achieve appreciable valley degeneracy splitting with applied magnetic field. We propose a strategy to create giant splitting of the valley degeneracy by proximity-induced Zeeman effect. As a demonstration, our first principles calculations of monolayer MoTe2_2 on a EuO substrate show that valley splitting over 300 meV can be generated. The proximity coupling also makes interband transition energies valley dependent, enabling valley selection by optical frequency tuning in addition to circular polarization. The valley splitting in the heterostructure is also continuously tunable by rotating substrate magnetization. The giant and tunable valley splitting adds a readily accessible dimension to the valley-spin physics with rich and interesting experimental consequences, and offers a practical avenue for exploring device paradigms based on the intrinsic degrees of freedom of electrons.Comment: 8 pages, 5 figures, 1 tabl

    Association of interleukin 10 rs1800896 polymorphism with susceptibility to breast cancer: a meta-analysis.

    Get PDF
    Objective: To evaluate the correlation between interleukin 10 (IL-10) -1082A/G polymorphism (rs1800896) and breast cancers by performing a meta-analysis. Methods: The Embase and Medline databases were searched through 1 September 2018 to identify qualified articles. Odds ratios (OR) and corresponding 95% confidence intervals (CIs) were applied to evaluate associations. Results: In total, 14 case-control studies, including 5320 cases and 5727 controls, were analyzed. We detected significant associations between the IL10 -1082 G/G genotype and risk of breast cancer (AA + AG vs. GG: OR = 0.88, 95% CI = 0.80-0.97). Subgroup analyses confirmed a significant association in Caucasian populations (OR = 0.89, 95% CI = 0.80-0.99), in population-based case-control studies (OR = 0.87, 95% CI = 0.78-0.96), and in studies with ≥500 subjects (OR = 0.88, 95% CI = 0.79-0.99) under the recessive model (AA + AG vs. GG). No associations were found in Asian populations. Conclusions: The IL10 -1082A/G polymorphism is associated with an increased risk of breast cancer. The association between IL10 -1082 G/G genotype and increased risk of breast cancer is more significant in Caucasians, in population-based studies, and in larger studies

    A relation between multiplicity of nonzero eigenvalues and the matching number of graph

    Full text link
    Let GG be a graph with an adjacent matrix A(G)A(G). The multiplicity of an arbitrary eigenvalue λ\lambda of A(G)A(G) is denoted by mλ(G)m_\lambda(G). In \cite{Wong}, the author apply the Pater-Wiener Theorem to prove that if the diameter of TT at least 44, then mλ(T)≤β′(T)−1m_\lambda(T)\leq \beta'(T)-1 for any λ≠0\lambda\neq0. Moreover, they characterized all trees with mλ(T)=β′(T)−1m_\lambda(T)=\beta'(T)-1, where β′(G)\beta'(G) is the induced matching number of GG. In this paper, we intend to extend this result from trees to any connected graph. Contrary to the technique used in \cite{Wong}, we prove the following result mainly by employing algebraic methods: For any non-zero eigenvalue λ\lambda of the connected graph GG, mλ(G)≤β′(G)+c(G)m_\lambda(G)\leq \beta'(G)+c(G), where c(G)c(G) is the cyclomatic number of GG, and the equality holds if and only if G≅C3(a,a,a)G\cong C_3(a,a,a) or G≅C5G\cong C_5, or a tree with the diameter is at most 33. Furthermore, if β′(G)≥3\beta'(G)\geq3, we characterize all connected graphs with mλ(G)=β′(G)+c(G)−1m_\lambda(G)=\beta'(G)+c(G)-1

    Coupling the valley degree of freedom to antiferromagnetic order

    Full text link
    Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics and advanced information technology. Valley as a new electronic degree of freedom has received considerable attention in recent years. In this paper, we develop the theory of spin and valley physics of an antiferromagnetic honeycomb lattice. We show that by coupling the valley degree of freedom to antiferromagnetic order, there is an emergent electronic degree of freedom characterized by the product of spin and valley indices, which leads to spin-valley dependent optical selection rule and Berry curvature-induced topological quantum transport. These properties will enable optical polarization in the spin-valley space, and electrical detection/manipulation through the induced spin, valley and charge fluxes. The domain walls of an antiferromagnetic honeycomb lattice harbors valley-protected edge states that support spin-dependent transport. Finally, we employ first principles calculations to show that the proposed optoelectronic properties can be realized in antiferromagnetic manganese chalcogenophosphates (MnPX_3, X = S, Se) in monolayer form.Comment: 6 pages, 5 figure
    • …
    corecore