Тепловой баланс помещения с электрической кабельной системой отопления

Solvothermal oxidation of metallic gallium in monoethanolamine for 72 h at 240 °C yields a crystalline sample of γ-Ga₂O₃ (∼30 nm crystallites). While Rietveld refinement (cubic spinel structure, <i>Fd</i>3̅<i>m</i>; <i>a</i> = 8.23760(9) Å) reveals that Ga occupies two pairs of octahedral and tetrahedral sites (ideal spinel and nonspinel), it provides no information about their local distribution, which cannot be statistical owing to the short Ga–Ga contacts produced if neighboring ideal spinel and nonspinel sites are simultaneously occupied. To create an atomistic model to reconcile this situation, a 6 × 6 × 6 supercell of the crystal structure is constructed and refined against neutron total scattering data using a reverse Monte Carlo (RMC) approach. This accounts well for the local as well as long-range structure and reveals significant local distortion in the octahedral sites that resembles the structure of thermodynamically stable β-Ga₂O₃. ⁷¹Ga solid-state NMR results reveal a octahedral:tetrahedral Ga ratio that is consistent with the model obtained from RMC. Nanocrystalline samples of γ-Ga₂O₃ are produced by either a short solvothermal reaction (240 °C for 11 h in diethanolamine; ∼15 nm crystallites) or by precipitation from an ethanolic solution of gallium nitrate (∼5 nm crystallites). For these samples, the Bragg scattering profile is broadened by their smaller crystallite size, consistent with transmission electron microscopy results, and analysis of the relative Bragg peak intensities provides evidence that a greater proportion of tetrahedral versus octahedral sites are filled. In contrast, neutron total scattering shows the same average Ga–O distance with decreasing particle size, consistent with ⁷¹Ga solid-state NMR results that indicate that all samples contain the same overall proportion of octahedral:tetrahedral Ga. It is postulated that increased occupation of tetrahedral sites within the smaller crystallites is balanced by an increased proportion of octahedral surface Ga sites, owing to termination by bound solvent or hydroxide

Selective Imaging of Discrete Polyoxometalate Ions on Graphene Oxide under Variable Voltage Conditions

Monosubstituted lacunary Keggin [CoSiW₁₁O₃₉]^6– ions on graphene oxide (GO) were used in a comparative imaging study using aberration corrected transmission electron microscopy at two different acceleration voltages, 80 and 200 kV. By performing a set of static and dynamical studies, together with image simulations, we show how the use of lower voltages results in better stability and resolution of the underlying GO support while the use of higher voltages permits better resolution of the individual tungsten atoms and leads to less kinetic motion of the cluster, thus leading to a more accurate identification of cluster orientation and better stability under dynamical imaging conditions. Applying different voltages also influences the visibility of both GO and the lighter Co at lower or higher voltages, respectively

Electronic Structure Control of Sub-nanometer 1D SnTe <i>via</i> Nanostructuring within Single-Walled Carbon Nanotubes

Nanostructuring, <i>e</i>.<i>g</i>., reduction of dimensionality in materials, offers a viable route toward regulation of materials electronic and hence functional properties. Here, we present the extreme case of nanostructuring, exploiting the capillarity of single-walled carbon nanotubes (SWCNTs) for the synthesis of the smallest possible SnTe nanowires with cross sections as thin as a single atom column. We demonstrate that by choosing the appropriate diameter of a template SWCNT, we can manipulate the structure of the quasi-one-dimensional (1D) SnTe to design electronic behavior. From first principles, we predict the structural re-formations that SnTe undergoes in varying encapsulations and confront the prediction with TEM imagery. To further illustrate the control of physical properties by nanostructuring, we study the evolution of transport properties in a homologous series of models of synthesized and isolated SnTe nanowires varying only in morphology and atomic layer thickness. This extreme scaling is predicted to significantly enhance thermoelectric performance of SnTe, offering a prospect for further experimental studies and future applications

Raman Spectroscopy of Optical Transitions and Vibrational Energies of ∼1 nm HgTe Extreme Nanowires within Single Walled Carbon Nanotubes

This paper presents a resonance Raman spectroscopy study of ∼1 nm diameter HgTe nanowires formed inside single walled carbon nanotubes by melt infiltration. Raman spectra have been measured for ensembles of bundled filled tubes, produced using tubes from two separate sources, for excitation photon energies in the ranges 3.39–2.61 and 1.82–1.26 eV for Raman shifts down to ∼25 cm^–1. We also present HRTEM characterization of the tubes and the results of DFT calculations of the phonon and electronic dispersion relations, and the optical absorption spectrum based upon the observed structure of the HgTe nanowires. All of the evidence supports the hypothesis that the observed Raman features are not attributable to single walled carbon nanotubes, <i>i.e.</i>, peaks due to radial breathing mode phonons, but are due to the HgTe nanowires. The observed additional features are due to four distinct phonons, with energies 47, 51, 94, and 115 cm^–1, respectively, plus their overtones and combinations. All of these modes have strong photon energy resonances that maximize at around 1.76 eV energy with respect to incident laser

Structures and Magnetism of the Rare-Earth Orthochromite Perovskite Solid Solution La_<i>x</i>Sm_1–<i>x</i>CrO₃

A new mixed rare-earth orthochromite series, La_<i>x</i>Sm_1–<i>x</i>CrO₃, prepared through single-step hydrothermal synthesis is reported. Solid solutions (<i>x</i> = 0, 0.25, 0.5, 0.625, 0.75, 0.875, and 1.0) were prepared by the hydrothermal treatment of amorphous mixed-metal hydroxides at 370 °C for 48 h. Transmission electron microscopy (TEM) reveals the formation of highly crystalline particles with dendritic-like morphologies. Rietveld refinements against high-resolution powder X-ray diffraction (PXRD) data show that the distorted perovskite structures are described by the orthorhombic space group <i>Pnma</i> over the full composition range. Unit cell volumes and Cr–O–Cr bond angles decrease monotonically with increasing samarium content, consistent with the presence of the smaller lanthanide in the structure. Raman spectroscopy confirms the formation of solid solutions, the degree of their structural distortion. With the aid of shell-model calculations the complex mixing of Raman modes below 250 cm^–1 is clarified. Magnetometry as a function of temperature reveals the onset of low-temperature antiferromagnetic ordering of Cr³⁺ spins with weak ferromagnetic component at Néel temperatures (<i>T</i>_N) that scale linearly with unit cell volume and structural distortion. Coupling effects between Cr³⁺ and Sm³⁺ ions are examined with enhanced susceptibilities below <i>T</i>_N due to polarization of Sm³⁺ moments. At low temperatures the Cr³⁺ sublattice is shown to undergo a second-order spin reorientation observed as a rapid decrease of susceptibility

Confined Crystals of the Smallest Phase-Change Material

The demand for high-density memory in tandem with limitations imposed by the minimum feature size of current storage devices has created a need for new materials that can store information in smaller volumes than currently possible. Successfully employed in commercial optical data storage products, phase-change materials, that can reversibly and rapidly change from an amorphous phase to a crystalline phase when subject to heating or cooling have been identified for the development of the next generation electronic memories. There are limitations to the miniaturization of these devices due to current synthesis and theoretical considerations that place a lower limit of 2 nm on the minimum bit size, below which the material does not transform in the structural phase. We show here that by using carbon nanotubes of less than 2 nm diameter as templates phase-change nanowires confined to their smallest conceivable scale are obtained. Contrary to previous experimental evidence and theoretical expectations, the nanowires are found to crystallize at this scale and display amorphous-to-crystalline phase changes, fulfilling an important prerequisite of a memory element. We show evidence for the smallest phase-change material, extending thus the size limit to explore phase-change memory devices at extreme scales

Size-Dependent Structure Relations between Nanotubes and Encapsulated Nanocrystals

The structural organization of compounds in a confined space of nanometer-scale cavities is of fundamental importance for understanding the basic principles for atomic structure design at the nanolevel. Here, we explore size-dependent structure relations between one-dimensional PbTe nanocrystals and carbon nanotube containers in the diameter range of 2.0–1.25 nm using high-resolution transmission electron microscopy and ab initio calculations. Upon decrease of the confining volume, one-dimensional crystals reveal gradual thinning, with the structure being cut from the bulk in either a <110> or a <100> growth direction until a certain limit of ∼1.3 nm. This corresponds to the situation when a stoichiometric (uncharged) crystal does not fit into the cavity dimensions. As a result of the in-tube charge compensation, one-dimensional superstructures with nanometer-scale atomic density modulations are formed by a periodic addition of peripheral extra atoms to the main motif. Structural changes in the crystallographic configuration of the composites entail the redistribution of charge density on single-walled carbon nanotube walls and the possible appearance of the electron density wave. The variation of the potential attains 0.4 eV, corresponding to charge density fluctuations of 0.14 e/atom

Scalable Patterning of Encapsulated Black Phosphorus

Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm. By encapsulating the BP with single layer graphene or hexagonal boron nitride (hBN), we show that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact. We have tested the approach in the scanning transmission electron microscope (STEM) and using industry standard electron beam lithography (EBL). Etched regions of the BP are stabilized by a thin passivation layer and demonstrate typical insulating behavior as measured at 300 and 4.3 K. This new scalable approach to nanopatterning of thin air sensitive crystals has the potential to facilitate their wider use for a variety of sensing and electronics applications