On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x107 which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled regio

Universal light-guiding geometry for on-chip resonators having extremely high Q-factor

By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor deposition. Using this method light-guiding cores with surface roughness on the molecular-scale are created automatically on pre-patterned substrates. Its efficacy has been verified using As2S3, a chalcogenide glass that has high-nonlinearity. The Q-factor of the As2S3 resonator so-developed approached the propagation loss record achieved in chalcogenide fibers which were limited by material losses. Owing to the boosted Q-factor, lasing by stimulated Brillouin scattering has been demonstrated with 100 times lower threshold power than the previous record.This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-IT1801-03

Universal light-guiding geometry for on-chip resonators having extremely high Q-factor

By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor deposition. Using this method light-guiding cores with surface roughness on the molecular-scale are created automatically on pre-patterned substrates. Its efficacy has been verified using As2S3, a chalcogenide glass that has high-nonlinearity. The Q-factor of the As2S3 resonator so-developed approached the propagation loss record achieved in chalcogenide fibers which were limited by material losses. Owing to the boosted Q-factor, lasing by stimulated Brillouin scattering has been demonstrated with 100 times lower threshold power than the previous record. © 2020, The Author(s).1

Supercontinuum generation in As2S3 waveguides fabricated without direct etching

We report a supercontinuum generation (SCG) in a waveguide that spontaneously forms without an etching process during the deposition of a core material on a preformed SiO2 substructure. The mechanism of dispersion control for this new, to the best of our knowledge, type of waveguide is analyzed by numerical simulation, which results in a design rule to achieve a target dispersion profile by adjusting the substructure geometry. SCG is experimentally demonstrated with a waveguide made of As2S3, chalcogenide glass, which has low material absorption over the mid-IR range. A dispersion-controlled waveguide with a length of 10 mm pumped with 77 pJ pulses at a telecommunication wavelength of 1560 nm resulted in a supercontinuum that extends by more than 1.5 octaves. © 2021 Optical Society of America1

Octave-Spanning Supercontinuum Generation in Thermally Deposited As2S3 Waveguide on Wet-etched SiO2 Structure

We report octave -spanning supercontinuum generation in etch -less As2S3 film waveguide platform. The spectrum is extended from 1.05 to 2.71 p.m pumped by 45 pJ pulse energy at 1.56 p.m telecommunication wavelength. (.0 2019 The Author(s

On-Chip Stimulated Brillouin Lasers based on Chalcogenide Glass Resonators with 10 Million Q-Factor

On-chip chalcogenide glass resonator with Q- factor of 1.08 Cross 107 is experimentally demonstrated with a new fabrication approach which avoids direct etch process. Waveguide-coupled stimulated Brillouin laser with 2.5 mW threshold power is implemented by flip-chip coupling