La-doped BaSnO3 for electromagnetic shielding transparent conductors

AbstractIn this work, we find that La-doped BaSnO3 (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl2O4 substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl2O4. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5–20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ −1, high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In2O3 and SrMoO3. Graphical Abstract</jats:p

BaZrO3/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba0.95La0.05SnO3 films on Al2O3 substrates, with very high transparency and X-band electromagnetic shielding

Acknowledgements: This work was supported by national R&D programs of the National Research Foundation of Korea funded by the Ministry of Science and ICT (project nos. NRF-2021M3F3A2A03015439, NRF-2021R1C1C1005042, and NRF-2018R1A5A1025511). We also acknowledge partial support from national R&D programs of the National Research Foundation of Korea funded by the Ministry of Education (project no. NRF-2021R1A6A3A13043948) and the DGIST R&D program of the Ministry of Science and ICT of Korea (project nos. 22-HRHR+-05, 22-CoE-NT-02, and 22-SENS-1). S.L. and J.L.M.-D. would like to thank Trinity College at Cambridge for partial support. J.L.M.-D. would like to thank the EU-H2020-ERC-ADG # 882929 grant, EROS, and the Royal Academy of Engineering CIET1819_24 for partial support.AbstractTransparent conductors with electromagnetic shielding capabilities (TC-EMS) are rare, despite their significant potential for creating new functionalities in energy and military applications. Here, we investigate the potential of La-doped BaSnO3 (BLSO) for TC-EMS since its epitaxial film has been known to have low sheet resistance and high visible transmittance. However, films grown on industrially practical Al2O3 substrates exhibit a sheet resistance three orders of magnitude higher than that of reported films grown on perovskites. Here, this problem is addressed by templating a BaZrO3/MgO bilayer on (0001)-oriented Al2O3 substrates to yield single-crystalline BLSO epitaxial films. The absence of grain boundaries in the epitaxial films minimizes the electron scattering. Due to the affirmative correlation between the conductivity and crystallinity, 5% La doping is optimal among the 5−20% La concentrations studied; these 480-nm-thick films have the highest crystallinity and the lowest sheet resistances of ~28 Ω ▯−1; this value is similar to that of single-crystalline levels. Due to their very high transmittances (~82% in a range 400−1000 nm) and effective X-band electromagnetic shielding (~18.6 dB), the BLSO epitaxial films grown on Al2O3 have great potential to be used for inexpensive TC-EMS applications.</jats:p

BaZrO 3 /MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba 0.95 La 0.05 SnO 3 films on Al 2 O 3 substrates, with very high transparency and X-band electromagnetic shielding

Acknowledgements: This work was supported by national R&D programs of the National Research Foundation of Korea funded by the Ministry of Science and ICT (project nos. NRF-2021M3F3A2A03015439, NRF-2021R1C1C1005042, and NRF-2018R1A5A1025511). We also acknowledge partial support from national R&D programs of the National Research Foundation of Korea funded by the Ministry of Education (project no. NRF-2021R1A6A3A13043948) and the DGIST R&D program of the Ministry of Science and ICT of Korea (project nos. 22-HRHR+-05, 22-CoE-NT-02, and 22-SENS-1). S.L. and J.L.M.-D. would like to thank Trinity College at Cambridge for partial support. J.L.M.-D. would like to thank the EU-H2020-ERC-ADG # 882929 grant, EROS, and the Royal Academy of Engineering CIET1819_24 for partial support.Transparent conductors with electromagnetic shielding capabilities (TC-EMS) are rare, despite their significant potential for creating new functionalities in energy and military applications. Here, we investigate the potential of La-doped BaSnO3 (BLSO) for TC-EMS since its epitaxial film has been known to have low sheet resistance and high visible transmittance. However, films grown on industrially practical Al2O3 substrates exhibit a sheet resistance three orders of magnitude higher than that of reported films grown on perovskites. Here, this problem is addressed by templating a BaZrO3/MgO bilayer on (0001)-oriented Al2O3 substrates to yield single-crystalline BLSO epitaxial films. The absence of grain boundaries in the epitaxial films minimizes the electron scattering. Due to the affirmative correlation between the conductivity and crystallinity, 5% La doping is optimal among the 5−20% La concentrations studied; these 480-nm-thick films have the highest crystallinity and the lowest sheet resistances of ~28 Ω ▯−1; this value is similar to that of single-crystalline levels. Due to their very high transmittances (~82% in a range 400−1000 nm) and effective X-band electromagnetic shielding (~18.6 dB), the BLSO epitaxial films grown on Al2O3 have great potential to be used for inexpensive TC-EMS applications

BaZrO3/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba0.95La0.05SnO3 films on Al2O3 substrates, with very high transparency and X-band electromagnetic shielding

Abstract Transparent conductors with electromagnetic shielding capabilities (TC-EMS) are rare, despite their significant potential for creating new functionalities in energy and military applications. Here, we investigate the potential of La-doped BaSnO3 (BLSO) for TC-EMS since its epitaxial film has been known to have low sheet resistance and high visible transmittance. However, films grown on industrially practical Al2O3 substrates exhibit a sheet resistance three orders of magnitude higher than that of reported films grown on perovskites. Here, this problem is addressed by templating a BaZrO3/MgO bilayer on (0001)-oriented Al2O3 substrates to yield single-crystalline BLSO epitaxial films. The absence of grain boundaries in the epitaxial films minimizes the electron scattering. Due to the affirmative correlation between the conductivity and crystallinity, 5% La doping is optimal among the 5−20% La concentrations studied; these 480-nm-thick films have the highest crystallinity and the lowest sheet resistances of ~28 Ω ▯−1; this value is similar to that of single-crystalline levels. Due to their very high transmittances (~82% in a range 400−1000 nm) and effective X-band electromagnetic shielding (~18.6 dB), the BLSO epitaxial films grown on Al2O3 have great potential to be used for inexpensive TC-EMS applications