Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements

Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture crosssections of the acceptor level of iron-boron pairs in silicon. The relative populations of iron-boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination prior to lifetime measurements. The components of the effective lifetime due to interstitial iron and iron-boron pairs were then modeled with Shockley-Read-Hall statistics. By forcing the sum of the modeled iron-boron and interstitial iron concentrations to equal the implanted iron dose, in conjunction with the strong dependence of the shape of the lifetime curves on dopant density, the electron and hole capture cross-sections of the acceptor level of iron-boron pairs have been determined as (3±2)×10-14cm-2 and (2±1)×10-15cm-2

Direct observation of voids in the vacancy excess region of ion bombarded silicon

The results reported in this letter indicate that the spatial separation of the vacancy and interstitial excesses which result from ion bombardment gives rise to stable voids upon annealing at 850 °C even for implants where the projected ion range is only of the order of a few thousand Ångstrom. Such voids have been observed directly by transmission electron microscopy. Furthermore, in cases where both voids and interstitial-based defects are present at different depths, it is found that Au has a strong preference for decorating void surfaces and hence Au can, indeed, be used as a selective detector of open volume defects in Si.One of the authors ~J.W.-L.! acknowledges the Australian Research Council for financial support

Nanoindentation-induced deformation of Ge

The deformation mechanisms of crystalline (100) Ge were studied using nanoindentation, cross sectional transmission electron microscopy (XTEM) and Raman microspectroscopy. For a wide range of indentation conditions using both spherical and pointed indenters, multiple discontinuities were found in the force–displacement curves on loading, but no discontinuities were found on unloading. Raman microspectroscopy, measured from samples which had plastically deformed on loading, showed a spectrum shift from that in pristine Ge, suggesting only residual strain. No evidence (such as extra Raman bands) was found to suggest that any pressure-induced phase transformations had occurred, despite the fact that the material had undergone severe plastic deformation.Selected area diffraction pattern studies of the mechanically damaged regions also confirmed the absence of additional phases. Moreover, XTEM showed that, at low loads, plastic deformation occurs by twinning and dislocation motion. This indicates that the hardness of Gemeasured by indentation is not primarily dominated by phase transformation, rather by the nucleation and propagation of twin bands and/or dislocations

Acceptor-like deep level defects in ion-implanted ZnO

N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.This work was supported by the Norwegian Research Council through the Frienergi program and the Australian Research Council through the Discovery projects program

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well(QW) structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent annealing caused additional injection of Ga into the SiO₂ layer, Ga atoms were still able to outdiffuse from the GaAsQW structure during annealing, to generate excess Ga vacancies. The suppression of interdiffusion with the presence of Ga vacancies was explained by the thermal stress effect which suppressed Ga vacancydiffusion during annealing. It suggests that GaxOy may therefore be used as a mask material in conjunction with other dielectric capping layers in order to control and selectively achieve impurity-free vacancy disordering.J. Wong-Leung, P. N. K. Deenapanray, and H. H. Tan acknowledge the fellowships awarded by the Australian Research Council

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with optimized AlxGa1xAs shell and twin-free Au-catalyzed GaAs cores. Time-resolved photoluminescence measurements were carried out on single nanowires at room temperature, revealing minority carrier lifetimes of 1.02 6 0.43 ns, comparable to self-assisted nanowires grown by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to improvement of the GaAs/AlxGa1xAs interface quality. The upper limit of surface recombination velocity of the structure is calculated to be 1300 cm/s with the AlxGa1xAs shell grown at 750 C, which is comparable with planar double heterostructures.The Australian Research Council is acknowledged for the financial support and the authors acknowledge the use of facilities in the Centre for Advanced Microscopy (AMMRF node) and the ACT node of the Australian National Fabrication Facility for this work

Equilibrium shape of nano-cavities in H implanted ZnO

Thermally equilibrated nano-cavities are formed in ZnO by H implantation and subsequent high temperature annealing to determine the relative surface formation energies and step energies of ZnO from reverse Wulff construction and related analysis. H adsorption, vicinal surfaces, and surface polarity are found to play an important role in determining the final thermal equilibrium shape of the nano-cavities. Under H coverage, the O-terminated surface shows a significantly lower surface formation energy than the Zn-terminated surface

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant (∼1×1015 ion cm−2) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2×1016 ion cm−2. We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a Sn − implant at a fluence of 4.5×1016 ion cm−2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ∼15 at.%, which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique

Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation

Photoelectrolysis of water using solar energy into storable and environment-friendly chemical fuel in the form of hydrogen provides a potential solution to address the environmental concerns and fulfill future energy requirements in a sustainable manner. Achieving efficient and spontaneous hydrogen evolution in water using solar light as the only energy input is a highly desirable but a difficult target. In this work, we report perovskite solar cell integrated CdS-based photoanode for unbiased photoelectrochemical hydrogen evolution. An integrated tandem device consisting of mesoporous CdS/TiO2 photoanode paired with a triple-cation perovskite (Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3) solar cell is developed via a facile fabrication route. The proposed photovoltaic integrated photoanode presents an efficient tandem configuration with high optical transparency to long-wavelength photons and strong photoelectrochemical conversions from short-wavelength photons. On the basis of this integrated tandem device, an unbiased photocurrent density of 7.8 mA/cm2 is demonstrated under AM1.5G illumination.ARC grant DP140103278 (2014-2016) - H.H. Tan, Nitride-based Compound Semiconductors for Solar Water Splittin