Dynamics of streamer discharge development in semiconductors

Space-time dynamics of streamer discharges in semiconductors in view of processes of shock (tunnel and photo-) ionization, radiating spontaneous and stimulated recombination as well as electron-photon interaction in a strong electric field has been modeled. The possibility of formation in these conditions of space-nonuniform dissipative structures, self-oscillatory regular and other modes were shown; their laws and interrelation with dynamics of streamer laser discharge were established. Nonmonotonic dependence of system characteristics on key parameters - excitation rate, life time of nonequilibrium carriers and photons, quantum efficiency of active environment as well as strengthening of structure interaction in conditions of stimulated recombination causing variety of own system dynamics were revealed. Radiating processes provide high speed of structure distribution compared with phase speed of light, and they are the basic generation mechanism of nonequilibrium carriers generation in self-oscillatory mode respective to optimum conditions of streamer occurrence and developmen

Метод CRAMM - комплексный подход к оценке рисков

The article shows the use of the method CRAMM for risk management and research of information security systems

Технологические решения для строительства эксплуатационной наклонно-направленной скважины глубиной 2775 метров на нефтяном месторождении Томской области

Цель работы – проектирование строительства наклонно-направленной эксплуатационной скважины глубиной 2775 метров на Соболином нефтяном месторождении Томской области. В данной работе приведены данные о параметрах сооружения скважины, рассмотрены процессы бурения и заканчивания скважин, выбрано соответствующее оборудование, а также затронуты вопросы воздействия на окружающую среду и оценена экономическая эффективность строительства скважины. В данной работе также содержатся исследования абразивного воздействия твердой фазы бурового раствора на эластомеры винтовых забойных двигателей с целью их модификации. Выпускная квалификационная работа выполнена с упором на современные достижения в области строительства нефтяных и газовых скважин.The aim of the work is the design of the construction of a directional production well with a depth of 2,775 meters at the Sobolinoe oil field in the Tomsk Region. In this paper, data are given on the parameters of well construction, drilling and completion of wells are considered, equipment is selected, and issues related to the economic state of the well are discussed. This paper also contains the results of studies conducted in accordance with the current regulations. Graduation qualification work was carried out with an emphasis on modern achievements in the field of construction of oil and gas wells

Нейроэволюционный алгоритм и программные средства для обработки изображений: автореферат диссертации на соискание ученой степени кандидата технических наук

Dry etching and micromachining with laser radiation of short wavelength and pulse length are investigated to present their process capabilities for the production of surface structures within precision Silicon components. The laser dry etching processing (CCl4) with Excimer laser radiation (lambda L=248 nm, tauta L=20 ns) is modified by using a microwave-excited processing gas (CF4). Furthermore, methylmethacrylate is additionally used to study the influence of polymerisation on the etched structures. The micromachining with frequency-doubled Nd:YLF laser radiation (lambda L=527 nm, tauta L=30 ps) is performed yielding more precise structures during drilling and caving due to the lower heat and pressure load during the interaction time. The processes involved in dry etching and micromachining with laser radiation are studied by high-speed photography, mass spectroscopy and optical spectroscopy, whereas the produced structures are analyzed by profilometry, optical and electron microscop y as well as electron spectroscopy such as XPS and AES. The results are discussed in view of applications for surface patterning of precision Silicon components