5,243 research outputs found
Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing
The single electron transistor (SET) offers unparalled opportunities as a
nano-scale electrometer, capable of measuring sub-electron charge variations.
SETs have been proposed for read-out schema in solid-state quantum computing
where quantum information processing outcomes depend on the location of a
single electron on nearby quantum dots. In this paper we investigate various
geometries of a SET in order to maximize the device's sensitivity to charge
transfer between quantum dots. Through the use of finite element modeling we
model the materials and geometries of an Al/Al2O3 SET measuring the state of
quantum dots in the Si substrate beneath. The investigation is motivated by the
quest to build a scalable quantum computer, though the methodology used is
primarily that of circuit theory. As such we provide useful techniques for any
electronic device operating at the classical/quantum interface.Comment: 13 pages, 17 figure
Self-aligned fabrication process for silicon quantum computer devices
We describe a fabrication process for devices with few quantum bits (qubits),
which are suitable for proof-of-principle demonstrations of silicon-based
quantum computation. The devices follow the Kane proposal to use the nuclear
spins of 31P donors in 28Si as qubits, controlled by metal surface gates and
measured using single electron transistors (SETs). The accurate registration of
31P donors to control gates and read-out SETs is achieved through the use of a
self-aligned process which incorporates electron beam patterning, ion
implantation and triple-angle shadow-mask metal evaporation
Molecular-beam epitaxy of CrSi_2 on Si(111)
Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)//Si(111) with CrSi_2[1120]//Si[101]. The latter case represents a 30° rotation of the CrSi_2 layer about the Si surface normal relative to the former case. Thick (210 nm) layers were grown by four different techniques, and the best‐quality layer was obtained by codeposition of Cr and Si at an elevated temperature. These layers are not single crystal; the largest grains are observed in a layer grown at 825 °C and are 1–2 μm across
Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture
We develop a theory for micro-Raman scattering by single and coupled
two-donor states in silicon. We find the Raman spectra to have significant
dependence on the donor exchange splitting and the relative spatial positions
of the two donor sites. In particular, we establish a strong correlation
between the temperature dependence of the Raman peak intensity and the
interdonor exchange coupling. Micro-Raman scattering can therefore potentially
become a powerful tool to measure interqubit coupling in the development of a
Si quantum computer architecture.Comment: Title changed. Other minor change
A note on the calculation of the effective range
The closed form of the first order non-linear differential equation that is
satisfied by the effective range within the variable phase formulation of
scattering theory is discussed. It is shown that the conventional method of
determining the effective range, by fitting a numerical solution of the
Schr\"odinger equation to known asymptotic boundary conditions, can be modified
to include the first order contribution of a long range interaction.Comment: 4 page
Defects Annealing of Si^+ Implanted GaAs at RT and 100°C
Annealing behavior of point defects near room temperature is studied by measuring the strain relaxation of Si+ implanted GaAs. Polished semi-insulating GaAs wafers were implanted with 300keV Si^+ at liquid nitrogen (LN_2) and room temperature (RT). The strain profile was obtained by the X-ray Double Crystal Diffraction (DCD) technique and kinematical fitting. The maximum strain of the samples stored at RT and elevated temperature 100°C in air, decreases with time, which indicates the reduction of point defects. Relaxation is exponential in time. At least two time constants of 0.24hrs and 24hrs are needed to fit the data, suggesting that two different processes are responsible for annealing defects. Time constants are obtained for different doses at RT and LN_2 implantation temperature, and found to be insensitive to both these quantities. The activation energy for defect migration is estimated using simple diffusion model
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