Nitrogen as Annihilation Centre for Point Defects in Implanted Silicon

The accumulation of radiation defects in silicon implanted with 150 keV N+ ions at high ion current density (20 A cm-2) and low density (0.05 A cm-2) was investigated by means of X-ray double-crystal spectrometer and EPR method. At high ion current density the radiation defects accumulate up to amorphization at the ion dose of 11015 cm-2. At low ion current density the curve of lattice parameter change on dose has oscillatory view and amorphization of the layer is not achieved at least up to ion dose of 1.41016 cm-2. The processes of the nitrogen atoms capture on the vacancy defects and Watkins displacement of them from the nodes work as additional channel of radiation defect annihilation. At high ion current densities and at high level of ionization in the implanted layer process of Watkins substitution is suppressed

Nitrogen as Annihilation Centre for Point Defects in Implanted Silicon

The accumulation of radiation defects in silicon implanted with 150 keV N+ ions at high ion current density (20 A cm-2) and low density (0.05 A cm-2) was investigated by means of X-ray double-crystal spectrometer and EPR method. At high ion current density the radiation defects accumulate up to amorphization at the ion dose of 11015 cm-2. At low ion current density the curve of lattice parameter change on dose has oscillatory view and amorphization of the layer is not achieved at least up to ion dose of 1.41016 cm-2. The processes of the nitrogen atoms capture on the vacancy defects and Watkins displacement of them from the nodes work as additional channel of radiation defect annihilation. At high ion current densities and at high level of ionization in the implanted layer process of Watkins substitution is suppressed