Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8 x 10(-4) eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 MU eV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC

Interactions between photoexcited NIR emitting CdHgTe quantum dots and graphene oxide

Hydrothermally grown mercury cadmium telluride quantum dots (CdHgTe QDs) are decorated on graphene oxide (GO) sheets through physisorption. The structural change of GO through partial reduction of oxygen functional groups is observed with X-ray photoelectron spectroscopy in GO-QDs composites. Raman spectroscopy provides relatively a small change (similar to 1.1 times) in D/G ratio of band intensity and red shift in G band from 1606 cm(-1) to 1594 cm(-1) in GO-CdHgTe QDs (2.6 nm) composites, which indicates structural modification of GO network. Steady state and time resolved photoluminescence (PL) spectroscopy shows the electronic interactions between photoexcited near infrared emitting CdHgTe QDs and GO. Another interesting observation is PL quenching in the presence of GO, and it is quite effective in the case of smaller size QDs (2.6 nm) compared to the larger size QDs (4.2 nm). Thus, the observed PL quenching is attributed to the photogenerated electron transfer from QDs to GO. The photoexcited electron transfer rate decreases from 2.2 x 10(9) to 1.5 x 10(8) s(-1) with increasing particle size from 2.6 to 4.2 nm. Photoconductivity measurements on QDs-GO composite devices show nearly 3 fold increase in the current density under photo-illumination, which is a promising aspect for solar energy conversion and other optoelectronic applications. (C) 2016 AIP Publishing LLC