High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6)

SI, BE, AND C ION IMPLANTATION IN GAAS0.93P0.07

The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07 have been measured in the annealing range 650-950 degrees C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is similar to 60% at a close of 5X10(14) cm(2) whereas that of C is an order of magnitude lower, Si produces donor activation percentages up to similar to 20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to similar to 950 degrees C as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage-related point defects remain in the GaAsP even after annealing or 950 degrees C. (C) 1996 American Institute of Physics.open11sciescopu