6 research outputs found

    UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces

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    In this study, ultrahigh vacuum (UHV) cross-sectional scanning tunneling microscopy (STM) and spectroscopy (STS) were used to probe the physical and electrical properties of individual single-walled carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an UHV-compatible dry contact transfer (DCT) process. Subsequent STM observations indicate a substrate-dependent SWNT orientation, with individual nanotubes exhibiting a tendency to align in the <1‾10><\overline 1 10> direction, parallel to surface sublattice rows, while STS measurements confirm the Type I and Type II energy band alignments of the GaAs/SWNT and InAs/SWNT systems, respectively. Additionally, the electronic character of a naturally occurring intramolecular semiconducting/metallic SWNT junction is profiled

    Subsurface dopant-induced features on the Si(100)2/spl times/1:H surface: fundamental study and applications

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    DOPANT FLEXIBILITY AND PROCESSABILITY STUDIES WITH ELECTRICALLY CONDUCTIVE, FACE-TO-FACE METALLOMACROCYCLIC POLYMERS

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    Dans des expériences de dopage avec la phtalocyanine polymérisée empilée face-à-face [Si (Pc)O]n, utilisant des accepteurs d'électrons à potentiel élevé (quinone, halogène au nitrosyle), l'hétérogénéité du procédé de dopage et le mécanisme de conductivité restent remarquablement constants. En utilisant des techniques de filage humide, nous avons démontré la possibilité de préparer des fibres de [Si(Pc)O]n (seul ou mélangé avec l'aramide polymérisé à haute performance Kevlar) qui conduisent l'électricité.In doping experiments on the cofacially arrayed phthalocyanine polymer [Si(Pc)O]n using high potential quinone, halogen, or nitrosyl electron acceptors, the achievable degree of partial oxidation, the inhomogeneity of the doping process, and the conductivity mechanism remain remarkably constant. Using wet spinning techniques, it has proven possible to prepare electrically conductive fibers of [Si(Pc)O]n alone or blended with the high performance aramid polymer Kevlar
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