Amorphization threshold in Si-implanted strained SiGe alloy layers

The authors have examined the damage produced by Si-ion implantation into strained Si{sub 1{minus}x}Ge{sub x} epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si{sub 1{minus}x}Ge{sub x} (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si{sub 1{minus}x}Ge{sub x}, and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers

The authors have examined the damage produced by Si-ion implantation into strained Si{sub 1{minus}x}Ge{sub x} epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si{sub 1{minus}x}Ge{sub x} (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si{sub 1{minus}x}Ge{sub x}, and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer