"Feedback large amplifier integrated on the detector wafer"

And 5th European Symposium Semiconductor Detectors, Munich, Feb. 21-23, 1989

The pn-CCD on-chip electronics.

A new pn-CCD with an activa area of 3 × 1 cm2 was recently fabricated for ESA's X-ray Multi Mirror Mission (XMM). The front-end electronics has been integrated on the same chip as the detector, and its noise behaviour was investigated. X-rays from a 55Fe source have been used for the absolute calibration. The measured electronic Equivalent Noise Charge (ENC) of the on-chip amplifier was 8.8 e− at room temperature and 2.2 e− at the CCD operating temperature of 150 K. The improvements with respect to the last version with noise figures of 4.8 e− (at 150 K) are due to the reduction of the total input capacitance by a factor of 1.6, the improvement of the transistor transconductance by a factor of 2, and the reduction of View the MathML source noise because of the different p-well implant with a better thermal annealing

"The MPI/AIT X-Ray imager (Maxi)-high speed pn-CCD's for X-Ray detection".

And 5th European Symposium on Semiconductor Detectors, Munich , Feb.21-23,1989

A Doublet of 3 in. cylindrical Silicon Drift Detectors in the CERES Experiment

We report on the performance of a doublet of 3 in. cylindrical silicon drift detectors installed as an upgrade of the CERES/NA45 electron pair spectrometer for the Pb-beam at the CERN SPS. The silicon detectors provide external particle tracking and background rejection of conversions and close Dalitz pairs. Results on vertex reconstruction and rejection from a Pb test-run in 1994 are presented