ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON

Photoluminescence was used to compare the effects of low-energy electron bombardment and laser irradiation in a-Si:H. The main effects are similar : 1) decrease of the main luminescence peak at 1.2 eV, 2) enhancement of luminescence at 0.8 eV, and 3) complete recovery of the original properties after annealing at 200°C. The decrease at 1.2 eV however, is much more pronounced with electron than with photon irradiation