22 research outputs found
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Structural defect control and photosensitivity in reactively sputtered germanosilicate glass films
The optical performance of refractive index structures induced in photosensitive (PS) glasses ultimately depends on the index modulation depth attainable. In germanosilicate materials, the photosensitive response is linked to the presence of oxygen-deficient germanium point defect centers. Prior efforts to increase PS in these materials, e.g., hydrogen loading, rely on a chemical reduction of the glass structure to enhance the population of oxygen deficient centers and thus increase the saturated refractive index change. We have previously reported the development of highly photosensitive, as-deposited germanosilicate glass films through reactive atmosphere (O{sub 2}/Ar) sputtering from a Ge/Si alloy target. The present work details our investigation of the effect of substrate temperature during deposition on the material structure and propensity for photosensitivity. Using optical absorption/bleaching, Raman, electron paramagnetic resonance (EPR) and selective charge injection techniques we show that the predominate defect states responsible for the PS response can be varied through substrate temperature control. We find that two regimes of photosensitive behavior can be accessed which exhibit dramatically different uv-bleaching characteristics. Thus, the corresponding dispersion of the refractive index change as well as its magnitude can be controlled using our synthesis technique. Tentative defect models for the photosensitive process in materials deposited at both ambient temperature and at elevated substrate temperatures will be presented
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Low work function thermionic emission materials
Thermionic energy conversion in a microminiature format shows potential as a viable, high efficiency, on-chip power source. Microminiature thermionic converters (MTC) with inter-electrode spacings on the order of microns are currently being prototyped and evaluated at Sandia. The remaining enabling technology is the development of low work function materials and processes than can be integrated into these converters. In this report, the authors demonstrate a method of incorporating thin film emitters into converters using rf sputtering. They find that the resultant films possess a minimum work function of 1.2 eV. Practical energy conversion is hindered by surface work function non-uniformity. They postulate the source of this heterogeneity to be a result of limited bulk and surface transport of barium. Several methods are proposed for maximizing transport, including increased film porosity and the use of metal terminating layers. They demonstrate a novel method for incorporating film porosity based on metal interlayer coalescence
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Uncooled thin film pyroelectric IR detector with aerogel thermal isolation
Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs
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Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films
Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film