38 research outputs found
Domain structure of bulk ferromagnetic crystals in applied fields near saturation
We investigate the ground state of a uniaxial ferromagnetic plate with
perpendicular easy axis and subject to an applied magnetic field normal to the
plate. Our interest is the asymptotic behavior of the energy in macroscopically
large samples near the saturation field. We establish the scaling of the
critical value of the applied field strength below saturation at which the
ground state changes from the uniform to a branched domain magnetization
pattern and the leading order scaling behavior of the minimal energy.
Furthermore, we derive a reduced sharp-interface energy giving the precise
asymptotic behavior of the minimal energy in macroscopically large plates under
a physically reasonable assumption of small deviations of the magnetization
from the easy axis away from domain walls. On the basis of the reduced energy,
and by a formal asymptotic analysis near the transition, we derive the precise
asymptotic values of the critical field strength at which non-trivial
minimizers (either local or global) emerge. The non-trivial minimal energy
scaling is achieved by magnetization patterns consisting of long slender
needle-like domains of magnetization opposing the applied fieldComment: 38 pages, 7 figures, submitted to J. Nonlin. Sci
Thermal Conductivity of Magnesium Alloys in the Temperature Range from −125 °C to 400 °C
Doença crônica da valva mitral em cães: avaliação clÃnica funcional e mensuração ecocardiográfica da valva mitral
Modelling short-term effects of sulphur dioxide. 1. A model for the flux of SO2 into leaves and effects on leaf photosynthesis
Efficiency-improvement study for GaAs solar cells. Final report, March 31, 1980-September 30, 1981
High-yield fabrication of good quality AlGaAs/GaAs concentration solar cells has been a limiting factor in widespread utilization of these high conversion efficiency (22 to 24%) photovoltaic cells. Reported is a series of investigations to correlate solar cell yield with substrate quality, growth techniques, layer composition, and metallization processes. In addition, several diagnostic techniques are described to aid in device characterization