52 research outputs found

    Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

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    We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystalline electric field. The ground state exhibits the long range antiferromagnetic order with the ferromagnetically coupled magnetic moments in the ac plane below 8.01 K, while the exited states exhibit the reduction of magnetic moment and magnetic entropy and -log T-behaviors observed in Kondo materials.Comment: 8 pages, 13 figure

    Spin-polaron model: transport properties of EuB6_6

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    To understand anomalous transport properties of EuB6_6, we have studied the spin-polaron Hamiltonian incorporating the electron-phonon interaction. Assuming a strong exchange interaction between the carriers and the localized spins, the electrical conductivity is calculated. The temperature and magnetic field dependence of the resistivity of EuB6_6 are well explained. At low temperature, magnons dominate the conduction process, whereas the lattice contribution becomes significant at very high temperature due to the scattering with the phonons. Large negative magnetoresistance near the ferromagnetic transition is also reproduced as observed in EuB6_6.Comment: 4 pages, 3 figures, accepted in Phys. Rev.

    Spin Transport in Two Dimensional Hopping Systems

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    A two dimensional hopping system with Rashba spin-orbit interaction is considered. Our main interest is concerned with the evolution of the spin degree of freedom of the electrons. We derive the rate equations governing the evolution of the charge density and spin polarization of this system in the Markovian limit in one-particle approximation. If only two-site hopping events are taken into account, the evolution of the charge density and of the spin polarization is found to be decoupled. A critical electric field is found, above which oscillations are superimposed on the temporal decay of the total polarization. A coupling between charge density and spin polarization occurs on the level of three-site hopping events. The coupling terms are identified as the anomalous Hall effect and the recently proposed spin Hall effect. Thus, an unpolarized charge current through a sheet of finite width leads to a transversal spin accumulation in our model system.Comment: 15 pages, 3 figure

    Acetaminophen-cysteine adducts during therapeutic dosing and following overdose

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    <p>Abstract</p> <p>Background</p> <p>Acetaminophen-cysteine adducts (APAP-CYS) are a specific biomarker of acetaminophen exposure. APAP-CYS concentrations have been described in the setting of acute overdose, and a concentration >1.1 nmol/ml has been suggested as a marker of hepatic injury from acetaminophen overdose in patients with an ALT >1000 IU/L. However, the concentrations of APAP-CYS during therapeutic dosing, in cases of acetaminophen toxicity from repeated dosing and in cases of hepatic injury from non-acetaminophen hepatotoxins have not been well characterized. The objective of this study is to describe APAP-CYS concentrations in these clinical settings as well as to further characterize the concentrations observed following acetaminophen overdose.</p> <p>Methods</p> <p>Samples were collected during three clinical trials in which subjects received 4 g/day of acetaminophen and during an observational study of acetaminophen overdose patients. Trial 1 consisted of non-drinkers who received APAP for 10 days, Trial 2 consisted of moderate drinkers dosed for 10 days and Trial 3 included subjects who chronically abuse alcohol dosed for 5 days. Patients in the observational study were categorized by type of acetaminophen exposure (single or repeated). Serum APAP-CYS was measured using high pressure liquid chromatography with electrochemical detection.</p> <p>Results</p> <p>Trial 1 included 144 samples from 24 subjects; Trial 2 included 182 samples from 91 subjects and Trial 3 included 200 samples from 40 subjects. In addition, we collected samples from 19 subjects with acute acetaminophen ingestion, 7 subjects with repeated acetaminophen exposure and 4 subjects who ingested another hepatotoxin. The mean (SD) peak APAP-CYS concentrations for the Trials were: Trial 1- 0.4 (0.20) nmol/ml, Trial 2- 0.1 (0.09) nmol/ml and Trial 3- 0.3 (0.12) nmol/ml. APAP-CYS concentrations varied substantially among the patients with acetaminophen toxicity (0.10 to 27.3 nmol/ml). No subject had detectable APAP-CYS following exposure to a non-acetaminophen hepatotoxin.</p> <p>Conclusions</p> <p>Lower concentrations of APAP-CYS are detectable after exposure to therapeutic doses of acetaminophen and higher concentrations are detected after acute acetaminophen overdose and in patients with acetaminophen toxicity following repeated exposure.</p

    Thermoelectrics: Distorted approach

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    Effective phonon scattering and enhancement of thermoelectric performance in Ga-excess Bi0.4Sb1.6Te3 compounds

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    We investigate the thermoelectric properties on Ga-excess p-type GaxBi(0.4)Sb(1.6)Te(3) compounds. Even though the random distribution of Ga-doping increases electrical resistivity giving rise to the decrease of power factor, the significant decrease of lattice thermal conductivity by the excess Ga-doping induces significant enhancement of ZT value (1.13 at 350 K) for the Ga x = 0.03 doped compound. From the X-ray diffraction and elemental mapping by energy dispersive X-ray spectroscopy, we observed Sb and Ga phase separation leading to the phonon scattering. The Sb precipitation implies atomic defect in the matrix which can induce short wavelength phonon scattering. The synergetic phonon scatterings from various scattering sources such as point defect, alloy scattering, and grain boundary phonon scattering have an important role in the enhancement of thermoelectric performance.11Nsciescopuskc
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