Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.Comment: 8 pages, 11 figure

Absence of nonlocal resistance in microstructures of PbTe quantum wells

We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF$_2$ substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb$_{0.92}$Eu$_{0.08}$Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle gamma is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.Comment: A substantially expanded paper, 11 pages and 11 figure

Evidence for Charging Effects in CdTe/CdMgTe Quantum Point Contacts

Here we report on fabrication and low temperature magnetotransport measurements of quantum point contacts patterned from a novel two-dimensional electron system - CdTe/CdMgTe modulation doped heterostructure. From the temperature and bias dependence we ascribe the reported data to evidence for a weakly bound state which is naturally formed inside a CdTe quantum constrictions due to charging effects. We argue that the spontaneous introduction of an open dot is responsible for the replacement of flat conductance plateaus by quasi-periodic resonances with amplitude less than 2e^{2}/h, as found in our system. Additionally, below 1 K a pattern of weaker conductance peaks, superimposed upon wider resonances, is also observed.Comment: 4 pages, 4 figure