Proton-Scattering on (29)Si in Range Ep = 2.5-3.4 MeV*

Elastic and inelastic proton scattering measurements on Elastic and inelastic proton scattering measurements on 29Si have been obtained in the energy range Ep = 2.5-3.4 MeV. 30 elastic and 32 inelastic resonances were observed. 14 prominent resonances from elastic scattering were analyzed. Results of the analysis for proton orbital momenta, spin and parity assignments, and proton partial widths are given. The inelastic resonance strengths measured relative to the known strength of the 1302-keV resonance in 29Si(p,y)30P are also reported

Residual Native Shallow Donor in ZnO

High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a multiple-displacement model

Residual Native Shallow Donor in ZnO

High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a multiple-displacement model

Residual Native Shallow Donor in ZnO

High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a multiple-displacement model

Production and Annealing of Electron Irradiation Damage in ZnO

High-energy (\u3e1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [000] direction (O face). The major annealing stage occurs at about 300–325 °C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more “radiation hard” than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites

\u3cem\u3eIn Situ\u3c/em\u3e Hall-Effect System for Real-Time Electron-Irradiation Studies

A unique system capable of taking in situ Hall‐effect measurements during electron irradiation has been developed. The key element is a small, powerful rare‐earth magnet. Measurements can be taken while the electron beam is on, resulting in a considerable time savings and eliminating problems associated with mounting and demounting the sample. High resolution electron concentration and mobility versus fluence data are quickly and easily obtained, making possible detailed defect production rate studies as functions of energy and flux