1 research outputs found
Ferromagnetism in magnetically doped III-V semiconductors
The origin of ferromagnetism in semimagnetic III-V materials is discussed.
The indirect exchange interaction caused by virtual electron excitations from
magnetic impurity level in the bandgap to the valence band can explain
ferromagnetism in GaAs(Mn) no matter samples are degenerated or not. Formation
of ferromagnetic clusters and percolation picture of phase transition describes
well all available experimental data and allows to predict the Mn-composition
dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.Comment: 4 pages with 3 figure