Negative Refraction and Left-handed electromagnetism in Microwave Photonic Crystals

We demonstrate negative refraction of microwaves in metallic photonic crystals. The spectral response of the photonic crystal, which manifests both positive and negative refraction, is in complete agreement with band-structure calculations and numerical simulations. The negative refraction observed corresponds to left-handed electromagnetism and arises due to the dispersion characteristics of waves in a periodic medium. This mechanism for negative refraction is different from that in metamaterials.Comment: 13 pages, 4 figure

Large Pyroelectric Response from Reactively Sputtered Aluminum Nitride Thin Films

We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n+ -doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, PV, in excess of 0.5 x 106 V/m/K was extracted for films in the 600 to 2500 Å thickness range

Critical State Flux Penetration and Linear Microwave Vortex Response in YBa_2Cu_3O_{7-x} Films

The vortex contribution to the dc field (H) dependent microwave surface impedance Z_s = R_s+iX_s of YBa_2Cu_3O_{7-x} thin films was measured using suspended patterned resonators. Z_s(H) is shown to be a direct measure of the flux density B(H) enabling a very precise test of models of flux penetration. Three regimes of field-dependent behavior were observed: (1) Initial flux penetration occurs on very low field scales H_i(4.2K) 100Oe, (2) At moderate fields the flux penetration into the virgin state is in excellent agreement with calculations based upon the field-induced Bean critical state for thin film geometry, parametrized by a field scale H_s(4.2K) J_c*d 0.5T, (3) for very high fields H >>H_s, the flux density is uniform and the measurements enable direct determination of vortex parameters such as pinning force constants \alpha_p and vortex viscosity \eta. However hysteresis loops are in disagreement with the thin film Bean model, and instead are governed by the low field scale H_i, rather than by H_s. Geometric barriers are insufficient to account for the observed results.Comment: 20 pages, LaTeX type, Uses REVTeX style files, Submitted to Physical Review B, 600 dpi PostScript file with high resolution figures available at http://sagar.physics.neu.edu/preprints.htm

An optical device for measuring bending strain to 5000 microstrain and compatible with optical fiber installations

An optical sensor is described which can be attached to a structure and used as a gage for measuring bending strain. This device can be adjusted to maximize the gage factor for predetermined strain ranges. The sensor consists of glass capillaries coated on the outer surfaces with an optical absorbing layer followed by a reflecting layer. A mechanical strengthening layer can be included to extend the range of strain response. A source laser beam from an optical fiber is injected into one end of the gage. The light remaining in the beam after traveling through the gage is collected via another optical fiber. The optically active layer is adjusted during manufacture to provide a predetermined gage factor. For a given thickness of the absorber layer, the detected light is proportional to the amount of bending. Thus, by rigidly affixing the sensor to a structural member, the strain experienced by the member can be monitored. © 2005 IEEE