Lonely adatoms in space

There is a close relation between the problems of second layer nucleation in epitaxial crystal growth and chemical surface reactions, such as hydrogen recombination, on interstellar dust grains. In both cases standard rate equation analysis has been found to fail because the process takes place in a confined geometry. Using scaling arguments developed in the context of second layer nucleation, I present a simple derivation of the hydrogen recombination rate for small and large grains. I clarify the reasons for the failure of rate equations for small grains, and point out a logarithmic correction to the reaction rate when the reaction is limited by the desorption of hydrogen atoms (the second order reaction regime)

The process of irreversible nucleation in multilayer growth. II. Exact results in one and two dimensions

We study irreversible dimer nucleation on top of terraces during epitaxial growth in one and two dimensions, for all values of the step-edge barrier. The problem is solved exactly by transforming it into a first passage problem for a random walker in a higher-dimensional space. The spatial distribution of nucleation events is shown to differ markedly from the mean-field estimate except in the limit of very weak step-edge barriers. The nucleation rate is computed exactly, including numerical prefactors.Comment: 22 pages, 10 figures. To appear in Phys. Rev.

Breakdown of metastable step-flow growth on vicinal surfaces induced by nucleation

We consider the growth of a vicinal crystal surface in the presence of a step-edge barrier. For any value of the barrier strength, measured by the length l_es, nucleation of islands on terraces is always able to destroy asymptotically step-flow growth. The breakdown of the metastable step-flow occurs through the formation of a mound of critical width proportional to L_c=1/sqrt(l_es), the length associated to the linear instability of a high-symmetry surface. The time required for the destabilization grows exponentially with L_c. Thermal detachment from steps or islands, or a steeper slope increase the instability time but do not modify the above picture, nor change L_c significantly. Standard continuum theories cannot be used to evaluate the activation energy of the critical mound and the instability time. The dynamics of a mound can be described as a one dimensional random walk for its height k: attaining the critical height (i.e. the critical size) means that the probability to grow (k->k+1) becomes larger than the probability for the mound to shrink (k->k-1). Thermal detachment induces correlations in the random walk, otherwise absent.Comment: 10 pages. Minor changes. Accepted for publication in Phys. Rev.

Coarsening in surface growth models without slope selection

We study conserved models of crystal growth in one dimension [$\partial_t z(x,t) =-\partial_x j(x,t)$] which are linearly unstable and develop a mound structure whose typical size L increases in time ($L = t^n$). If the local slope ($m =\partial_x z$) increases indefinitely, $n$ depends on the exponent $\gamma$ characterizing the large $m$ behaviour of the surface current $j$ ($j = 1/|m|^\gamma$): $n=1/4$ for $1< \gamma <3$ and $n=(1+\gamma)/(1+5\gamma)$ for $\gamma>3$.Comment: 7 pages, 2 EPS figures. To be published in J. Phys. A (Letter to the Editor

Nonmonotonic roughness evolution in unstable growth

The roughness of vapor-deposited thin films can display a nonmonotonic dependence on film thickness, if the smoothening of the small-scale features of the substrate dominates over growth-induced roughening in the early stage of evolution. We present a detailed analysis of this phenomenon in the framework of the continuum theory of unstable homoepitaxy. Using the spherical approximation of phase ordering kinetics, the effect of nonlinearities and noise can be treated explicitly. The substrate roughness is characterized by the dimensionless parameter $Q = W_0/(k_0 a^2)$, where $W_0$ denotes the roughness amplitude, $k_0$ is the small scale cutoff wavenumber of the roughness spectrum, and $a$ is the lattice constant. Depending on $Q$, the diffusion length $l_D$ and the Ehrlich-Schwoebel length $l_{ES}$, five regimes are identified in which the position of the roughness minimum is determined by different physical mechanisms. The analytic estimates are compared by numerical simulations of the full nonlinear evolution equation.Comment: 16 pages, 6 figures, to appear on Phys. Rev.

Shor's quantum factoring algorithm on a photonic chip

Shor's quantum factoring algorithm finds the prime factors of a large number exponentially faster than any other known method a task that lies at the heart of modern information security, particularly on the internet. This algorithm requires a quantum computer a device which harnesses the `massive parallelism' afforded by quantum superposition and entanglement of quantum bits (or qubits). We report the demonstration of a compiled version of Shor's algorithm on an integrated waveguide silica-on-silicon chip that guides four single-photon qubits through the computation to factor 15.Comment: 2 pages, 1 figur

The process of irreversible nucleation in multilayer growth. I. Failure of the mean-field approach

The formation of stable dimers on top of terraces during epitaxial growth is investigated in detail. In this paper we focus on mean-field theory, the standard approach to study nucleation. Such theory is shown to be unsuitable for the present problem, because it is equivalent to considering adatoms as independent diffusing particles. This leads to an overestimate of the correct nucleation rate by a factor N, which has a direct physical meaning: in average, a visited lattice site is visited N times by a diffusing adatom. The dependence of N on the size of the terrace and on the strength of step-edge barriers is derived from well known results for random walks. The spatial distribution of nucleation events is shown to be different from the mean-field prediction, for the same physical reason. In the following paper we develop an exact treatment of the problem.Comment: 19 pages, 3 figures. To appear in Phys. Rev.