Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope

We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 micron. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick barium strontium titanate thin film on a lanthanum aluminate substrate. This technique is nondestructive and has broadband (0.1-50 GHz) capability. The sensitivity of the microscope to changes in relative permittivity is 2 at permittivity = 500, while the nonlinear dielectric tunability sensitivity is 10^-3 cm/kV.Comment: 12 pages, 10 figures, to be published in Rev. Sci. Instrum., July, 200

The focused ion beam as an integrated circuit restructuring tool

One of the capabilities of focused ion beam systems is ion milling. The purpose of this work is to explore this capability as a tool for integrated circuit restructuring. Methods for cutting and joining conductors are needed. Two methods for joining conductors are demonstrated. The first consists of spinning nitrocellulose (a self‐developing resist) on the circuit, ion exposing an area, say, 7×7 μm, then milling a smaller via with sloping sidewalls through the first metal layer down to the second, e‐beam evaporating metal, and then dissolving the nitrocellulose to achieve liftoff. The resistance of these links between two metal levels varied from 1 to 7 Ω. The second, simpler method consists of milling a via with vertical sidewalls down to the lower metal layer, then reducing the milling scan to a smaller area in the center of this via, thereby redepositing the metal from the lower layer on the vertical sidewall. The short circuit thus achieved varied from 0.4 to 1.5 Ω for vias of dimensions 3×3 μm to 1×1 μm, respectively. The time to mill a 1×1 μm via with a 68 keV Ga+ beam, of 220 Pa current is 60 s. In a system optimized for this application, this milling time is expected to be reduced by a factor of at least 100. In addition, cuts have been made in 1‐μm‐thick Al films covered by 0.65 μm of SiO2. These cuts have resistances in excess of 20 MΩ. This method of circuit restructuring can work at dimensions a factor of 10 smaller than laser zapping and requires no special sites to be fabricated

Focused Ion Beam Fabrication

Contains reports on five research projects.DARPA/Naval Electronic Systems Command (Contract MDA-903-85-C-0215)Charles Stark Draper Laboratory (Contract DL-H-261827)U.S. Navy - Office of Naval Research (Contract N00014-84-K-0073)Nippon Telephone and TelegraphHitachi Central Research Laborator

Topological crystalline insulator states in Pb(1-x)Sn(x)Se

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.Comment: v2: published revised manuscript (6 pages, 3 figures) and supplementary information (5 pages, 8 figures

Focused Ion Beam Fabrication

Contains reports on four sections of one research project.Microsystems Technology LaboratoriesDefense Advanced Research Projects Agency/Naval Electronics Systems Command (Contract MDA 903-85-C-0215)U.S. Air Force (through Lincoln Laboratory)Defense Advanced Research Projects Agency (through Lincoln Laboratory)Charles Stark Draper Laboratory, Inc. (Contract DL-H-261827)Hitachi Central Research LaboratoryNippon Telegraph & TelephoneU.S. Army Research Office (Contract DAALO3-87-K-0126

Focused Ion Beam Fabrication

Contains summary of research program and reports on four research projects.Charles Stark Draper Laboratory (Contract DL-H-225270)Hughes Research LaboratoriesInternational Business Machines, Inc. (Contract 456614)Nippon Telegraph and Telephone, Inc.U.S. Navy - Office of Naval Research (Contract N00014-84-K-0073)U.S. Department of Defense (Contract MDA903-85-C-0215)Hitachi Central Research Laborator

Focused Ion Beam Fabrication

Contains reports on eight research projects.DARPA/Naval Electronics Systems Command (Contract MDA 903-85-C-0215)DARPA/U.S. Army Research Office (Contract DAAL03-88-K-0108)U.S. Army Research Office (Contract DAAL03-87-K-0126)Charles Stark Draper LaboratoryInternational Business Machines Corporation - Research Division, General Technologies DivisionU.S. Air ForceDARP

Focused Ion Beam Fabrication

Contains reports on three research projects.Joint Services Electronics Program (Contract DAAG29-83-K-0003)Charles Stark Draper Laboratory (Contract DL-H-225270)International Business Machines, Inc. (Contract 3260

Microstructural Evolution in Thin Films of Electronic Materials

Contains reports on eight research projects and a list of publications.National Science FoundationU.S. Air Force - Office of Scientific ResearchJoint Services Electronics Program Contract DAAL03-89-C-0001IBM CorporationHitachi CorporationSemiconductor Research CorporationNational Institutes of Healt