Time-dependent quantum transport: Direct analysis in the time domain

We present a numerical approach for solving time-dependent quantum transport problems in molecular electronics. By directly solving Green's functions in the time domain, this approach does not rely on the wide-band limit approximation thereby is capable of taking into account the detailed electronic structures of the device leads which is important for molecular electronics. Using this approach we investigate two typical situations: current driven by a bias voltage pulse and by a periodic field, illustrating that the computational requirement is no more than an inversion of a relatively small triangular matrix plus several matrix multiplications. We then present numerical results of time-dependent charge current for a one-dimensional atomic chain. The numerical solution recovers known results in the wide-band limit, and reveals physical behavior for leads with finite bandwidth.published_or_final_versio

Kondo lattice on the edge of a two-dimensional topological insulator

We revisit the problem of a single quantum impurity on the edge of a two-dimensional time-reversal invariant topological insulator and show that the zero temperature phase diagram contains a large local moment region for antiferromagnetic Kondo coupling which was missed by previous poor man's scaling treatments. The combination of an exact solution at the so-called decoupling point and a renormalization group analysis \`a la Anderson-Yuval-Hamann allows us to access the regime of strong electron-electron interactions on the edge and strong Kondo coupling. We apply similar methods to the problem of a regular one-dimensional array of quantum impurities interacting with the edge liquid. When the edge electrons are at half-filling with respect to the impurity lattice, the system remains gapless unless the Luttinger parameter of the edge is less than 1/2, in which case two-particle backscattering effects drive the system to a gapped phase with long-range Ising antiferromagnetic order. This is in marked contrast with the gapped disordered ground state of the ordinary half-filled one-dimensional Kondo lattice.Comment: 18 pages, 3 figures; fixed typos, updated reference

Orbital Order and Spontaneous Orthorhombicity in Iron Pnictides

A growing list of experiments show orthorhombic electronic anisotropy in the iron pnictides, in some cases at temperatures well above the spin density wave transition. These experiments include neutron scattering, resistivity and magnetoresistance measurements, and a variety of spectroscopies. We explore the idea that these anisotropies stem from a common underlying cause: orbital order manifest in an unequal occupation of $d_{xz}$ and $d_{yz}$ orbitals, arising from the coupled spin-orbital degrees of freedom. We emphasize the distinction between the total orbital occupation (the integrated density of states), where the order parameter may be small, and the orbital polarization near the Fermi level which can be more pronounced. We also discuss light-polarization studies of angle-resolved photoemission, and demonstrate how x-ray absorption linear dichroism may be used as a method to detect an orbital order parameter.Comment: Orig.: 4+ pages; Rev.: 4+ pages with updated content and reference

Nonlocal edge state transport in the quantum spin Hall state

We present direct experimental evidence for nonlocal transport in HgTe quantum wells in the quantum spin Hall regime, in the absence of any external magnetic field. The data conclusively show that the non-dissipative quantum transport occurs through edge channels, while the contacts lead to equilibration between the counter-propagating spin states at the edge. We show that the experimental data agree quantitatively with the theory of the quantum spin Hall effect.Comment: 13 pages, 4 figure

Disorder-Induced Multiple Transition involving Z2 Topological Insulator

Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder strength and magnitude of the energy gap. In the presence of sz non-conserving spin-orbit coupling, a finite metallic region is found that partitions the two topologically distinct insulating phases. As disorder increases, a narrow-gap topologically trivial insulator undergoes a series of transitions; first to metal, second to topological insulator, third to metal, and finally back to trivial insulator. We show that this multiple transition is a consequence of two disorder effects; renormalization of the band gap, and Anderson localization. The metallic region found in the scaling analysis corresponds roughly to the region of finite density of states at the Fermi level evaluated in the self-consistent Born approximation.Comment: 5 pages, 5 figure

Demonstration of Floquet engineered non-Abelian geometric phase for holonomic quantum computing

Holonomic quantum computing (HQC) functions by transporting an adiabatically degenerate manifold of computational states around a closed loop in a control-parameter space; this cyclic evolution results in a non-Abelian geometric phase which may couple states within the manifold. Realizing the required degeneracy is challenging, and typically requires auxiliary levels or intermediate-level couplings. One potential way to circumvent this is through Floquet engineering, where the periodic driving of a nondegenerate Hamiltonian leads to degenerate Floquet bands, and subsequently non-Abelian gauge structures may emerge. Here we present an experiment in ultracold $^{87}$Rb atoms where atomic spin states are dressed by modulated RF fields to induce periodic driving of a family of Hamiltonians linked through a fully tuneable parameter space. The adiabatic motion through this parameter space leads to the holonomic evolution of the degenerate spin states in $SU(2)$, characterized by a non-Abelian connection. We study the holonomic transformations of spin eigenstates in the presence of a background magnetic field, characterizing the fidelity of these gate operations. Results indicate that while the Floquet engineering technique removes the need for explicit degeneracies, it inherits many of the same limitations present in degenerate systems