High-field irreversible moment reorientation in the antiferromagnet Fe1.1_{1.1}Te

Magnetization measurements have been performed on single-crystalline Fe$_{1.1}$Te in pulsed magnetic fields $\mathbf{H}\perp\mathbf{c}$ up to 53 T and temperatures from 4.2 to 65 K. At $T=4.2$ K, a non-reversible reorientation of the antiferromagnetic moments is observed at $\mu_0H_R=48$ T as the pulsed field is on the rise. No anomaly is observed at $H_R$ during the fall of the field and, as long as the temperature is unchanged, during both rises and falls of additional field pulses. The transition at $H_R$ is reactivated if the sample is warmed up above the N\'{e}el temperature $T_N\simeq60$ K and cooled down again. The magnetic field-temperature phase diagram of Fe$_{1.1}$Te in $\mathbf{H}\perp\mathbf{c}$ is also investigated. We present the temperature dependence of $H_R$, as well as that of the antiferromagnetic-to-paramagnetic borderline $H_c$ in temperatures above 40 K.Comment: 5 pages, 4 figure

Quantum Size Effect transition in percolating nanocomposite films

We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced Quantum Size Effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.Comment: 21 pages, 8 figure

Dispositif de compensation pour la mise en évidence d'effets oscillatoires de la magnétorésistance en champ magnétique pulsé

Un dispositif électronique permet d'éliminer la partie monotone de la magnétorésistance au voisinage d'oscillations, pour des mesures effectuées à l'aide d'un champ magnétique pulsé à décroissance exponentielle

Xt – Xl valley crossover and deformation potential in AlP/GaP quantum wells

International audienc

Xt – Xl valley crossover and deformation potential in AlP/GaP quantum wells

International audienc

Compact magnetospectrometer for pulsed magnets based on infrared quantum cascade lasers

International audienc